Characterization of Photoelectric Properties and Composition Effect of TiO2/ZnO/Fe2O3Composite by Combinatorial Methodology

2010 ◽  
Vol 12 (6) ◽  
pp. 883-889 ◽  
Author(s):  
Yichuan Liao ◽  
Huayao Li ◽  
Yuan Liu ◽  
Zhijun Zou ◽  
Dawen Zeng ◽  
...  
Keyword(s):  
Composition Effect ◽  
Photoelectric Properties

Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric properties

2003 ◽  
Vol 82 (4) ◽  
pp. 639-641 ◽  
Author(s):  
S. S. Kim ◽  
Y. S. Choi ◽  
Kibum Kim ◽  
J. H. Kim ◽  
Seongil Im
Keyword(s):  
Photoelectric Properties

Preparation at Low-Temperature and Characterization of TiO2 Film Used for Solar Cells

2013 ◽  
Vol 537 ◽  
pp. 205-208
Author(s):  
Xiao Qiang Wang ◽  
Yue Liu Li ◽  
Jian Min Wang ◽  
Jing Guo ◽  
Ming Ya Li
Keyword(s):  
Low Temperature ◽  
Fill Factor ◽  
Sol Gel ◽  
Influence Factors ◽  
Raw Material ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Photoelectric Properties

In this work, nanocrystalline TiO2 powder was prepared by the sol-gel method via tetrabutyl titanate as raw material, non-ion surfactant TO8 as a template. Then the nanocrystalline TiO2 thin film electrodes which were coated on FTO glass substrates via the slurry consiting of TiO2 powder prepared by us and the trabutyl titanate precursor were successfully prepared by using a simple and convenient hydrothermal method at low temperature. The structure and morphology of powders and films were characterized by X-ray diffraction, scanning electric microscopy. The influence factors on the samples were discussed. The photoelectric properties of cells assembled by the films were measured. The results show that, at 25°C and under 1000W/m2 light intensity，open voltage is 708mV, Jsc is 14.648mA/cm2, fill factor is 53.788, the conversion efficiency is 5.5988%.

Study the I-V and C-V Characterization of n-ZnO/p-Si Heterojunction

2013 ◽  
Vol 690-693 ◽  
pp. 607-610
Author(s):  
Xiong Chao ◽  
Li Hua Ding ◽  
Xiao Jin ◽  
Chen Lei ◽  
Hong Chun Yuan ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
Carrier Transport ◽  
Interface States ◽  
Band Offset ◽  
Current Transport ◽  
Valence Band Offset ◽  
Forward Voltage ◽  
Photoelectric Detection ◽  
Photoelectric Properties

A type n conductance of ZnO thin film was deposited on the p-Si filim by magnetron sputtering Al doped ZnO ceramic target, and the ZnO/p-Si heterojunction was preparated. The photoelectric properties, charge carrier transport mechanism were studied by testing the I-V, C-V characteristics with illumination and without illumination. The results shows that there exists a good rectifying properties and photoelectric response for ZnO/p-Si heterojunctions, and can be widely used in photoelectric detection and fields of solar cells. As the conduction band and valence band offset in the ZnO/p-Si heterojunction is too big, the current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at the forward voltage exceeds 1 V. The results suggest the existence of a large number of interface states in ZnO/p-Si heterojunction, and the interface states can be reduced and the photoelectric properties can be further improved.

Fullerene C60–Silver Nanoparticles Hybrid Structures: Optical and Photoelectric Characterization

2008 ◽  
Vol 8 (11) ◽  
pp. 5958-5965 ◽  
Author(s):  
N. L. Dmitruk ◽  
O. Yu. Borkovskaya ◽  
S. V. Mamykin ◽  
D. O. Naumenko ◽  
N. I. Berezovska ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Absorption Coefficient ◽  
Internal Quantum Efficiency ◽  
Barrier Properties ◽  
Light Transmittance ◽  
Silicon Substrates ◽  
Photoelectric Properties ◽  
Current Voltage ◽  
Si Films

A detailed optical and photoelectric characterization of pristine fullerene C60 films deposited onto n-silicon substrates (C60/Si), C60 films crosslinked by means of the solvent-free chemical functionalization with 1,8-diaminooctane (C60-DA/Si), and the pristine and crosslinked films decorated with silver nanoparticles (C60-Ag/Si and C60-DA-Ag/Si), was carried out. The reflectance spectra obtained allowed to calculate the absorption coefficient (α = 4pik/λ) spectral dependencies and the spectra of light transmittance in layered barrier structures metal(Au)/fullerene/Si. Photoelectric properties of the films were investigated as well. The experimentally measured values of band gap were in a good agreement with mobility gap values (2.3±0.1 eV). The decoration of fullerene films (both pristine and chemically crosslinked) with silver nanoparticles did not change the photocurrent spectra as compared to those for undecorated fullerene films, but lowered the values of internal quantum efficiency Qint. The photocurrent generated in fullerene/Si heterostructure, showed a maximum value at λ ∼450 nm (Qint max≈0.25 for decorated and undecorated C60-DA/Si films), and it was higher for the samples based on pristine C60 films, in accordance with their higher absorption coefficient. Diminishing of Qint for C60-DA/Si and C60-DA-Ag/Si films was observed for the spectral range of photocurrent generated in Si layer. The analysis of dark current–voltage characteristics showed that the barrier properties differ insignificantly, though a certain increase of series resistance was observed for the C60-DA/Si samples.

Characterization of Photoelectric Properties of ZnO by I-V Measurement

2012 ◽  
Vol 428 ◽  
pp. 153-158
Author(s):  
Meng Meng Miao
Keyword(s):  
Grain Boundary ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
The Other ◽  
Oxide Semiconductor ◽  
Semiconductor Materials ◽  
Photoelectric Conversion ◽  
Testing Conditions ◽  
Photoelectric Properties

Experiments with ZnO Metal-Oxide-Semiconductor （MOS） under different circumstances were made to get four different I-V curves. There were four conditions: dark, and tests with the green, blue, ultraviolet LED light. According to references, three parameters B，VB0and Nbarrcould be acquired by fitting lines of the I-V curves using MATLAB and LabVIEW. From their definitions, B, VB0and Nbarrindicate photoelectric properties of ZnO cooperatively under concrete conditions. VB0,grain boundary potential, is parameter of extrinsic properties of ZnO determined by both ZnO and testing conditions. So VB0is critical to control the photoelectric properties of ZnO. A smaller VB0, the stronger the photoelectric response of ZnO and the lager the efficiency of photoelectric conversion. Besides, this theory can be expanded to test the photoelectric properties of the other semiconductor materials. And I-V curves can direct the application of these materials efficiently.

Deposition and characterization of (In1-Al )2O3 films with tunable photoelectric properties

Vacuum ◽  
2021 ◽  
pp. 110680
Author(s):  
Xuejian Du ◽  
Xianwu Xiu ◽  
Wei Tang ◽  
Shouzhen Jiang ◽  
Baoyuan Man
Keyword(s):  
Photoelectric Properties

Morphological Characterization of Mycobacteriophage R1

1974 ◽  
Vol 32 ◽  
pp. 254-255
Author(s):  
B. L. Soloff ◽  
T. A. Rado
Keyword(s):  
Carbon Source ◽  
Stationary Phase ◽  
Growth Phase ◽  
Minimal Medium ◽  
Morphological Characterization ◽  
Logarithmic Growth Phase ◽  
Complete Lysis ◽  
Lysogenic Culture ◽  
Logarithmic Growth

Mycobacteriophage R1 was originally isolated from a lysogenic culture of M. butyricum. The virus was propagated on a leucine-requiring derivative of M. smegmatis, 607 leu−, isolated by nitrosoguanidine mutagenesis of typestrain ATCC 607. Growth was accomplished in a minimal medium containing glycerol and glucose as carbon source and enriched by the addition of 80 μg/ ml L-leucine. Bacteria in early logarithmic growth phase were infected with virus at a multiplicity of 5, and incubated with aeration for 8 hours. The partially lysed suspension was diluted 1:10 in growth medium and incubated for a further 8 hours. This permitted stationary phase cells to re-enter logarithmic growth and resulted in complete lysis of the culture.

AEM analysis of crystallization in Ti-based amorphous alloys

1983 ◽  
Vol 41 ◽  
pp. 270-271
Author(s):  
A.R. Pelton ◽  
A.F. Marshall ◽  
Y.S. Lee
Keyword(s):  
Magnetic Properties ◽  
Amorphous Alloys ◽  
Amorphous Materials ◽  
Isothermal Annealing ◽  
Amorphous Matrix ◽  
Nucleation And Growth ◽  
Current Interest ◽  
Amorphous Films ◽  
Electrical And Magnetic Properties

Amorphous materials are of current interest due to their desirable mechanical, electrical and magnetic properties. Furthermore, crystallizing amorphous alloys provides an avenue for discerning sequential and competitive phases thus allowing access to otherwise inaccessible crystalline structures. Previous studies have shown the benefits of using AEM to determine crystal structures and compositions of partially crystallized alloys. The present paper will discuss the AEM characterization of crystallized Cu-Ti and Ni-Ti amorphous films.Cu60Ti40: The amorphous alloy Cu60Ti40, when continuously heated, forms a simple intermediate, macrocrystalline phase which then transforms to the ordered, equilibrium Cu3Ti2 phase. However, contrary to what one would expect from kinetic considerations, isothermal annealing below the isochronal crystallization temperature results in direct nucleation and growth of Cu3Ti2 from the amorphous matrix.

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