Amine Functional Specialty Polymers as Adhesives in Multilayer Film Composite Structures

2000 ◽  
pp. 186-199 ◽  
Author(s):  
C. Chappell ◽  
E. L. Mason ◽  
J. A. Siddiqui
Keyword(s):  
Composite Structures ◽  
Multilayer Film ◽  
Film Composite

One-step vapor deposition of ZnO nanowires/MgO film composite structures

2014 ◽  
Vol 136 ◽  
pp. 318-321 ◽  
Author(s):  
M.V. Ryzhova ◽  
A.N. Redkin ◽  
E.E. Yakimov
Keyword(s):  
Vapor Deposition ◽  
Composite Structures ◽  
Zno Nanowires ◽  
Film Composite ◽  
One Step

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

A Numerical and Experimental Approach for Modeling Porosity Due to Entrapped Air and Volatiles Off-gassing During Manufacturing of Composite Structures

2019 ◽  
Author(s):  
Curtis Hickmott ◽  
Alireza Forghani ◽  
Victoria Hutten ◽  
Evan Lorbiecki ◽  
Frank Palmieri ◽  
...  
Keyword(s):  
Composite Structures ◽  
Experimental Approach ◽  
Entrapped Air
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