In Situ Monitoring by Mass Spectrometry of Laser Ablation Plumes Used in Thin Film Deposition

Author(s):  
John W. Hastie ◽  
Albert J. Paul ◽  
David W. Bonnell ◽  
Peter K. Schenck
1997 ◽  
Author(s):  
Thomas D. Rahmlow, Jr. ◽  
Jeanne E. Lazo-Wasem ◽  
David A. Rahmlow

Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


1998 ◽  
Vol 66 (2) ◽  
pp. 183-187 ◽  
Author(s):  
M. Diegel ◽  
F. Falk ◽  
R. Hergt ◽  
H. Hobert ◽  
H. Stafast

1997 ◽  
Vol 295 (1-2) ◽  
pp. 77-82 ◽  
Author(s):  
A. Giardini Guidoni ◽  
A. Mele ◽  
T.M. Di Palma ◽  
C. Flamini ◽  
S. Orlando ◽  
...  

1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.


1998 ◽  
Vol 313-314 ◽  
pp. 511-515 ◽  
Author(s):  
Xiang Gao ◽  
Darin W Glenn ◽  
John A Woollam

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