Diazapentacene Derivatives as Thin-Film Transistor Materials: Morphology Control in Realizing High-Field-Effect Mobility

2009 ◽  
Vol 1 (9) ◽  
pp. 2071-2079 ◽  
Author(s):  
Shou-Zheng Weng ◽  
Paritosh Shukla ◽  
Ming-Yu Kuo ◽  
Yu-Chang Chang ◽  
Hwo-Shuenn Sheu ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Morphology Control ◽  
Field Effect Mobility

High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress

2019 ◽  
Vol 40 (9) ◽  
pp. 1443-1446
Author(s):  
Jiseob Lee ◽  
Dongjin Kim ◽  
Suhui Lee ◽  
Johann Cho ◽  
Hyungryul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Negative Bias ◽  
Field Effect Mobility ◽  
Negative Bias Illumination Stress

N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

2002 ◽  
Vol 80 (14) ◽  
pp. 2517-2519 ◽  
Author(s):  
Patrick R. L. Malenfant ◽  
Christos D. Dimitrakopoulos ◽  
Jeffrey D. Gelorme ◽  
Laura L. Kosbar ◽  
Teresita O. Graham ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Organic Thin Film Transistor

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

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