Carburization of Tungsten Filaments in a Hot-Wire Chemical Vapor Deposition Process using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane

2009 ◽  
Vol 1 (9) ◽  
pp. 1919-1926 ◽  
Author(s):  
L. Tong ◽  
Y. J. Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Hot Wire ◽  
Tungsten Filaments ◽  
Vapor Deposition Process

scholarly journals Наращивание слоя Ge на структуру Si/SiO-=SUB=-2-=/SUB=-/Si (100) методом "горячей проволоки"

2020 ◽  
Vol 54 (10) ◽  
pp. 1129
Author(s):  
А.А. Сушков ◽  
Д.А. Павлов ◽  
С.А. Денисов ◽  
В.Ю. Чалков ◽  
Р.Н. Крюков ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Energy ◽  
Buffer Layers ◽  
Chemical Vapor Deposition Process ◽  
Hot Wire ◽  
Vapor Deposition Process

Ge/Si buffer layers grown at different temperatures on Si/SiO2/Si (100) substrates have been fabricated and studied. The Si buffer was grown via molecular beam epitaxy. The Ge layer was produced in a single stage via hot wire chemical vapor deposition process. Structural properties were investigated by high-resolution transmission electron microscopy and reflected high-energy electron diffraction. Such structures can be used in the future as a substrate for growth of high quality light-emitting structures compatible with silicon radiation-resistant integrated circuits. The paper shows the possibility of growth of a single crystal layer of Ge on Si/SiO2/Si (100) through a buffer layer of Si by the hot wire chemical vapor deposition process, and also demonstrates the difficulties that arise in the process of growth of Ge/Si layers on Si/SiO2/Si (100).

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