A Highly Sensitive Hydrogen Sensor with Gas Selectivity Using a PMMA Membrane-Coated Pd Nanoparticle/Single-Layer Graphene Hybrid

2015 ◽  
Vol 7 (6) ◽  
pp. 3554-3561 ◽  
Author(s):  
Juree Hong ◽  
Sanggeun Lee ◽  
Jungmok Seo ◽  
Soonjae Pyo ◽  
Jongbaeg Kim ◽  
...  
Keyword(s):  
Single Layer ◽  
Hydrogen Sensor ◽  
Single Layer Graphene ◽  
Pd Nanoparticle ◽  
Layer Graphene ◽  
Highly Sensitive ◽  
Gas Selectivity

Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection

2012 ◽  
Vol 717-720 ◽  
pp. 687-690
Author(s):  
Ruth Pearce ◽  
R. Yakimova ◽  
L. Hultman ◽  
Jens Eriksson ◽  
Mike Andersson ◽  
...  
Keyword(s):  
Work Function ◽  
Elevated Temperatures ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Steady Increase ◽  
Fermi Level Pinning ◽  
Layer Graphene ◽  
Highly Sensitive ◽  
Grown Graphene ◽  
P Type

Epitaxially grown single layer graphene on silicon carbide (SiC) resistive sensors were characterised for NO2 response at room and elevated temperatures, with an n-p type transition observed with increasing NO2 concentrations for all sensors. The concentration of NO2 required to cause this transition varied with different graphene samples and is attributed to varying degrees of substrate induced Fermi-level pinning above the Dirac point. The work function of a single layer device demonstrated a steady increase in work function with increasing NO2 concentration indicating no change in reaction mechanism in the concentration range measured despite a change in sensor response direction. Epitaxially grown graphene device preparation is challenging due to poor adhesion of the graphene layer to the substrate. A field effect transistor (FET) device is presented which does not require wire bonding to contacts on graphene.

scholarly journals Highly sensitive UVA and violet photodetector based on single-layer graphene-TiO_2 heterojunction

2016 ◽  
Vol 24 (23) ◽  
pp. 25922 ◽  
Author(s):  
Feng-Xia Liang ◽  
Deng-Yue Zhang ◽  
Jiu-Zhen Wang ◽  
Wei-Yu Kong ◽  
Zhi-Xiang Zhang ◽  
...  
Keyword(s):  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Highly Sensitive

Characteristics of Hydrogen Sensor Based on Monolayer of Pt Nanoparticles Decorated on Single-Layer Graphene

2017 ◽  
Vol 46 (6) ◽  
pp. 3353-3358 ◽  
Author(s):  
Nguyen Hai Ha ◽  
Cung Thanh Long ◽  
Nguyen Hoang Nam ◽  
Nguyen Thi Hue ◽  
Nguyen Huy Phuong ◽  
...  
Keyword(s):  
Single Layer ◽  
Pt Nanoparticles ◽  
Hydrogen Sensor ◽  
Single Layer Graphene ◽  
Layer Graphene

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

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