Ultraviolet Light Stable and Transparent Sol–Gel Methyl Siloxane Hybrid Material for UV Light-Emitting Diode (UV LED) Encapsulant

2015 ◽  
Vol 7 (2) ◽  
pp. 1035-1039 ◽  
Author(s):  
Jun-young Bae ◽  
YongHo Kim ◽  
HweaYoon Kim ◽  
YuBae Kim ◽  
Jungho Jin ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Hybrid Material ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Sol Gel ◽  
Light Emitting ◽  
Uv Led ◽  
Siloxane Hybrid Material

scholarly journals Photocatalytic Degradation of 2-Chlorophenol Using Ag-Doped TiO2Nanofibers and a Near-UV Light-Emitting Diode System

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Ju-Young Park ◽  
In-Hwa Lee
Keyword(s):  
Phase Transformation ◽  
Photocatalytic Degradation ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Sol Gel ◽  
Order Equation ◽  
Light Emitting ◽  
First Order ◽  
Uv Led ◽  
Diode System

This report investigated the photocatalytic degradation of 2-chlorophenol using TiO2nanofibers and Ag-doped TiO2nanofibers, synthesized using the sol-gel and electrospinning techniques, and an ultraviolet light-emitting diode (UV-LED) system as a UV light source. The crystallite size of the Ag-doped TiO2nanofibers was smaller than that of the TiO2nanofibers, because silver retrained phase transformation not only controls the phase transformation but also inhibits the growth of anatase crystallites. The activation energies for the grain growth of the TiO2nanofibers and the Ag-doped TiO2nanofibers were estimated to be 20.84 and 27.01 kJ/mol, respectively. The photocatalytic degradation rate followed a pseudo-first-order equation. The rate constants (k) of the TiO2nanofibers and the Ag-doped TiO2nanofibers were 0.056 and 0.144 min−1, respectively.

Ultraviolet light-emitting diode (UV LED) trap the West Indian sweet potato weevil, Euscepes postfasciatus (Coleoptera: Curculionidae)

2012 ◽  
Vol 47 (3) ◽  
pp. 285-290 ◽  
Author(s):  
Masako Katsuki ◽  
Yusuke Omae ◽  
Kensuke Okada ◽  
Toru Kamura ◽  
Takashi Matsuyama ◽  
...  
Keyword(s):  
Sweet Potato ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
West Indian ◽  
The West ◽  
Light Emitting ◽  
Uv Led ◽  
Sweet Potato Weevil ◽  
Euscepes Postfasciatus

Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures

2010 ◽  
Vol 25 (6) ◽  
pp. 1037-1040 ◽  
Author(s):  
Weihuang Yang ◽  
Shuping Li ◽  
Hangyang Chen ◽  
Dayi Liu ◽  
Junyong Kang
Keyword(s):  
Quantum Wells ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Force Microscopy ◽  
Uv Led ◽  
Hole Blocking Layer ◽  
To Come ◽  
P Type

The AlGaN-based ultraviolet (UV) light-emitting diode (LED) structures with AlN as buffer were grown on sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A series of cathodoluminescence (CL) spectra were measured from the cross section of the UV-LED structure using point-by-point sampling to investigate the origins of the broad parasitic emissions between 300 and 400 nm, and they were found to come from the n-type AlGaN and AlN layers rather than p-type AlGaN. The parasitic emissions were effectively suppressed by adding an n-type AlN as the hole-blocking layer. Electroluminescence (EL) and atomic force microscopy (AFM) measurements have revealed that the interface abruptness and crystalline quality of the UV-LED structure are essential for the achievement of the EL emissions from the multiple quantum wells (MQWs).

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