Uniform Growth of High-Quality Oxide Thin Films on Graphene Using a CdSe Quantum Dot Array Seeding Layer

2014 ◽  
Vol 6 (15) ◽  
pp. 13015-13022 ◽  
Author(s):  
Yong-Tae Kim ◽  
Seoung-Ki Lee ◽  
Kwang-Seop Kim ◽  
Yong Ho Kim ◽  
Jong-Hyun Ahn ◽  
...  
2021 ◽  
Vol 127 ◽  
pp. 105690
Author(s):  
A. Sáenz-Trevizo ◽  
D. Kuchle-Mena ◽  
P. Pizá-Ruiz ◽  
P. Amézaga-Madrid ◽  
O. Solís-Canto ◽  
...  

1996 ◽  
Vol 446 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzkp ◽  
Richard A. Stall ◽  
Yongfei Zhu ◽  
Seshu B. Desu

AbstractNanoscale oxide thin films such as Ba1‐xSrxTiO3 (BST), SrBi2Ta2O9 (SBT), and PbZr1‐xTixO3 (PZT) that have a high dielectric constant and excellent ferroelectric properties have been receiving greatly increased attention, especially for high density memories in next generation integrated circuits. However, with increasing deposition temperature the surface roughness of the films increases, which results in high leakage current, and when the thickness of oxide films is decreased, the apparent bulk‐like properties of thin films tend to worsen due to the increased influence of the interface. To solve these problems, novel MOCVD techniques, plasma enhanced deposition, and a two step process, were developed for high quality oxide thin films.


2018 ◽  
Vol 10 (20) ◽  
pp. 17129-17139 ◽  
Author(s):  
Hui Li ◽  
Peng Wen ◽  
Adam Hoxie ◽  
Chaochao Dun ◽  
Shiba Adhikari ◽  
...  

2008 ◽  
Author(s):  
Bo Zhou ◽  
Jinliang Wang ◽  
Yadong Pan ◽  
Li Wang ◽  
Hongyong Peng

2017 ◽  
Vol 5 (31) ◽  
pp. 7720-7725 ◽  
Author(s):  
Xun Cao ◽  
Zhiqi Liu ◽  
Liv R. Dedon ◽  
Andrew J. Bell ◽  
Faye Esat ◽  
...  

In this communication, we report the successful growth of high-quality Aurivillius oxide thin films with m = 8 (where m denotes the number of pseudo-perovskite blocks) using pulsed laser deposition.


2017 ◽  
Vol 46 (8) ◽  
pp. 2670-2679 ◽  
Author(s):  
Sarah Karle ◽  
Detlef Rogalla ◽  
Arne Ludwig ◽  
Hans-Werner Becker ◽  
Andreas Dirk Wieck ◽  
...  

A streamlined approach towards high-quality p-type CuOx nanostructures was successfully established based on rational precursor design for chemical solution deposition.


2019 ◽  
Vol 7 (42) ◽  
pp. 24124-24149 ◽  
Author(s):  
Elizabeth A. Cochran ◽  
Keenan N. Woods ◽  
Darren W. Johnson ◽  
Catherine J. Page ◽  
Shannon W. Boettcher

Unique chemistries of metal-nitrate precursors that enable the preparation of high-quality, high-performance metal-oxide thin films by solution deposition are reviewed.


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