Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+δ Thin Films on NdGaO3 Substrates

2014 ◽  
Vol 6 (11) ◽  
pp. 8526-8530 ◽  
Author(s):  
Ming Liu ◽  
Qiang Zou ◽  
Chunrui Ma ◽  
Greg Collins ◽  
Shao-Bo Mi ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Anisotropic Transport

Crystallographic and Anisotropic Transport Properties in Untwined Bi2Sr2CaCu2Oy Thin Films

1997 ◽  
pp. 1089-1092
Author(s):  
Takayuki Ishibashi ◽  
Katsuaki Sato ◽  
Kiejin Lee ◽  
Ienari Iguchi ◽  
Mitsuo Kawabe
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Anisotropic Transport

Anisotropic transport properties of UPd2Al3 thin films

1995 ◽  
Vol 206-207 ◽  
pp. 618-621 ◽  
Author(s):  
J. Hessert ◽  
M. Huth ◽  
M. Jourdan ◽  
H. Adrian
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Anisotropic Transport

Anisotropic transport properties of epitaxial La2/3Ca1/3MnO3 thin films with different growth orientations (invited)

2000 ◽  
Vol 211 (1-3) ◽  
pp. 1-8 ◽  
Author(s):  
V.S Amaral ◽  
A.A.C.S Lourenço ◽  
J.P Araújo ◽  
P.B Tavares ◽  
E Alves ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Anisotropic Transport

Epitaxial growth and anisotropic transport properties of YBa 2 Cu 3 O 7 thin films.

1989 ◽  
Vol 162-164 ◽  
pp. 647-648 ◽  
Author(s):  
O. Brunner ◽  
J.-M. Triscone ◽  
M.G. Karkut ◽  
L. Antognazza ◽  
A.D. Kent ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Epitaxial Growth ◽  
Anisotropic Transport

Fabrication and Anisotropic Transport Properties of (Hg,Re)Ba2CaCu2OyEpitaxial Thin Films on Vicinal Substrates with Buffer Layers

2003 ◽  
Vol 43 (1A/B) ◽  
pp. L40-L43 ◽  
Author(s):  
Akihiro Ogawa ◽  
Tsuyoshi Sugano ◽  
Hironori Wakana ◽  
Ai Kamitani ◽  
Seiji Adachi ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Buffer Layers ◽  
Anisotropic Transport

Growth and anisotropic transport properties of off-axis MgB2 thin films

2020 ◽  
Vol 569 ◽  
pp. 1353587
Author(s):  
Hong-Zhang Wang ◽  
Yu-Long Li ◽  
Yue Wang ◽  
Zi-Zhao Gan
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Anisotropic Transport ◽  
Mgb2 Thin Films

Step Terrace Tuned Anisotropic Transport Properties of Highly Epitaxial LaBaCo2O5.5+δ Thin Films on Vicinal SrTiO3 Substrates

2014 ◽  
Vol 6 (9) ◽  
pp. 6704-6708 ◽  
Author(s):  
Q. Zou ◽  
M. Liu ◽  
G. Q. Wang ◽  
H. L. Lu ◽  
T. Z. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Anisotropic Transport

scholarly journals Stoichiometry control and electronic and transport properties of pyrochlore Bi2Ir2O7 thin films

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
W. C. Yang ◽  
Y. T. Xie ◽  
X. Sun ◽  
X. H. Zhang ◽  
K. Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Stoichiometry Control

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

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