Effect of Surface Wettability Properties on the Electrical Properties of Printed Carbon Nanotube Thin-Film Transistors on SiO2/Si Substrates

2014 ◽  
Vol 6 (13) ◽  
pp. 9997-10004 ◽  
Author(s):  
Zhen Liu ◽  
Jianwen Zhao ◽  
Wenya Xu ◽  
Long Qian ◽  
Shuhong Nie ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Surface Wettability ◽  
Si Substrates ◽  
Effect Of Surface

Fabrication and electrical properties of all-printed carbon nanotube thin film transistors on flexible substrates

2012 ◽  
Vol 22 (38) ◽  
pp. 20747 ◽  
Author(s):  
Jianwen Zhao ◽  
Yulong Gao ◽  
Weibing Gu ◽  
Chao Wang ◽  
Jian Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Flexible Substrates

Effect of Surface Chemistry on Electronic Properties of Carbon Nanotube Network Thin Film Transistors

ACS Nano ◽  
2010 ◽  
Vol 4 (10) ◽  
pp. 6137-6145 ◽  
Author(s):  
Michael Vosgueritchian ◽  
Melburne C. LeMieux ◽  
Daniel Dodge ◽  
Zhenan Bao
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Surface Chemistry ◽  
Electronic Properties ◽  
Thin Film Transistors ◽  
Carbon Nanotube Network ◽  
Effect Of Surface

scholarly journals High field breakdown characteristics of carbon nanotube thin film transistors

2013 ◽  
Vol 24 (40) ◽  
pp. 405204 ◽  
Author(s):  
Man Prakash Gupta ◽  
Ashkan Behnam ◽  
Feifei Lian ◽  
David Estrada ◽  
Eric Pop ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
High Field

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

2014 ◽  
Vol 25 (48) ◽  
pp. 485703 ◽  
Author(s):  
Nicola Coppedè ◽  
Irina Valitova ◽  
Farzaneh Mahvash ◽  
Giuseppe Tarabella ◽  
Paolo Ranzieri ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Titanyl Phthalocyanine
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