Enhanced Charge Transfer Kinetics of CdSe Quantum Dot-Sensitized Solar Cell by Inorganic Ligand Exchange Treatments

2014 ◽  
Vol 6 (5) ◽  
pp. 3721-3728 ◽  
Author(s):  
Hyeong Jin Yun ◽  
Taejong Paik ◽  
Michael E. Edley ◽  
Jason B. Baxter ◽  
Christopher B. Murray
2013 ◽  
Vol 118 (1) ◽  
pp. 214-222 ◽  
Author(s):  
Feng Liu ◽  
Jun Zhu ◽  
Junfeng Wei ◽  
Yi Li ◽  
Linhua Hu ◽  
...  

2018 ◽  
Vol 1 (6) ◽  
pp. 2907-2917 ◽  
Author(s):  
Ying-Chih Pu ◽  
Haixia Ma ◽  
Nicholas Sajben ◽  
Guangming Xia ◽  
Jinsong Zhang ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16693-16699 ◽  
Author(s):  
Ajith Thomas ◽  
R. Vinayakan ◽  
V. V. Ison

An inverted bulk-heterojunction hybrid solar cell with the structure ITO/ZnO/P3HT:PbS/Au was prepared. The device performance was enhanced by inserting an interface buffer layer of CdSe quantum dots between the ZnO and the P3HT:PbS BHJ active layer.


2010 ◽  
Vol 97 (12) ◽  
pp. 123107 ◽  
Author(s):  
Qing Shen ◽  
Akari Yamada ◽  
Satoru Tamura ◽  
Taro Toyoda

2009 ◽  
Vol 11 (6) ◽  
pp. 1337-1339 ◽  
Author(s):  
Sheng-Qiang Fan ◽  
Duckhyun Kim ◽  
Jeum-Jong Kim ◽  
Dong Woon Jung ◽  
Sang Ook Kang ◽  
...  

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Koyasu ◽  
Daiki Atarashi ◽  
Etsuo Sakai ◽  
Masahiro Miyauchi

The performance of quantum dot-sensitized solar cell (QDSSC) is mainly limited by chemical reactions at the interface of the counter electrode. Generally, the fill factor (FF) of QDSSCs is very low because of large charge transfer resistance at the interface between the counter electrode and electrolyte solution containing redox couples. In the present research, we demonstrate the improvement of the resistance by optimization of surface area and amount of catalyst of the counter electrode. A facile chemical synthesis was used to fabricate a composite counter electrode consisting of fluorine-doped tin oxide (FTO) powder and CuS nanoparticles. The introduction of a sputtered gold layer at the interface of the porous-FTO layer and underlying glass substrate also markedly reduced the resistance of the counter electrode. As a result, we could reduce the charge transfer resistance and the series resistance, which were 2.5 [Ω] and 6.0 [Ω], respectively. This solar cell device, which was fabricated with the presently designed porous-FTO counter electrode as the cathode and a PbS-modified electrode as the photoanode, exhibited a FF of 58%, which is the highest among PbS-based QDSSCs reported to date.


2019 ◽  
Vol 123 (28) ◽  
pp. 17127-17135 ◽  
Author(s):  
Zhi Wang ◽  
Mona Rafipoor ◽  
Pablo Garcia Risueño ◽  
Jan-Philip Merkl ◽  
Peng Han ◽  
...  

2019 ◽  
Vol 69 ◽  
pp. 1-6 ◽  
Author(s):  
Qiaomu Xie ◽  
Shuaiqiang Ming ◽  
Lijun Chen ◽  
Yulei Wu ◽  
Wenxiao Zhang ◽  
...  

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