Liquid Crystalline Perylene Diimide Outperforming Nonliquid Crystalline Counterpart: Higher Power Conversion Efficiencies (PCEs) in Bulk Heterojunction (BHJ) Cells and Higher Electron Mobility in Space Charge Limited Current (SCLC) Devices

2013 ◽  
Vol 5 (21) ◽  
pp. 11093-11100 ◽  
Author(s):  
Youdi Zhang ◽  
Helin Wang ◽  
Yi Xiao ◽  
Ligang Wang ◽  
Dequan Shi ◽  
...  
2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Hardeep Singh Gill ◽  
Lian Li ◽  
Haizhou Ren ◽  
Ravi Mosurkal ◽  
Jayant Kumar

The effect of nanoimprinted structures on the performance of organic bulk heterojunction solar cells was investigated. The nanostructures were formed over the active layer employing the soft lithographic technique. The measured incident photon-to-current efficiency revealed that the nanostructured morphology over the active layer can efficiently enhance both light harvesting and charge carrier collection due to improvement of the absorption of incident light and the buried nanostructured cathode, respectively. The devices prepared with the imprinted nanostructures exhibited significantly higher power conversion efficiencies as compared to those of the control cells.


2020 ◽  
Vol 56 (42) ◽  
pp. 5629-5632 ◽  
Author(s):  
Indu Bala ◽  
Joydip De ◽  
Santosh Prasad Gupta ◽  
Harpreet Singh ◽  
Upendra Kumar Pandey ◽  
...  

Tetrathienoanthracene (TTA), a new discotic core fragment, is explored that shows a remarkably high hole mobility (μh) of 4.22 cm2 V−1 s−1 at room temperature when used in space-charge limited current (SCLC) devices.


2008 ◽  
Vol 94 (2) ◽  
pp. 281-286 ◽  
Author(s):  
Pankaj Kumar ◽  
S. C. Jain ◽  
Vikram Kumar ◽  
Suresh Chand ◽  
R. P. Tandon

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.


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