Nanoscale Resistive Switching Schottky Contacts on Self-Assembled Pt Nanodots on SrTiO3

2013 ◽  
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Haeri Kim ◽  
Trong Nghia Van ◽  
Dong-Wook Kim ◽  
Jeong Young Park
Langmuir ◽  
2012 ◽  
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...  

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...  

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Nanomaterials ◽  
2017 ◽  
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Michael Noyong ◽  
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...  

2014 ◽  
Vol 50 (86) ◽  
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Wenxi Zhao ◽  
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Peng Chen

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...  

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Peng Chen

Correction for ‘Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests’ by Bai Sun et al., Chem. Commun., 2014, 50, 13142–13145.


2020 ◽  
Vol 90 (2) ◽  
pp. 298
Author(s):  
С.В. Тихов ◽  
А.И. Белов ◽  
Д.С. Королев ◽  
И.Н. Антонов ◽  
А.А. Сушков ◽  
...  

The electrophysical characteristics of multilayer memristive structure Au/Ta/ZrO2(Y)/TaOx/TiN have been studied. The effects of electron and ion electrification associated with carrier trapping on traps and ion migration polarization in a dielectric are found. The effect of traps located in dielectrics on the effects of electroforming and resistive switching is established. The values of activation energy and concentrations for traps and ions are determined. The phenomenon of stabilization of resistive switching, which is associated with the features of the two-layer structure of YSZ/TaOx and self-assembled Ta nanoclusters, is found. Nanoclusters play the role of electric field concentrators in the process of electroforming and subsequent resistive switching.


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