Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors

2013 ◽  
Vol 5 (21) ◽  
pp. 10715-10720 ◽  
Author(s):  
Si Joon Kim ◽  
Joohye Jung ◽  
Keun Woo Lee ◽  
Doo Hyun Yoon ◽  
Tae Soo Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Oxide Thin Film ◽  
Dna Nanostructures ◽  
Label Free ◽  
Electrical Detection ◽  
Solution Processed ◽  
Artificial Dna

scholarly journals Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors

2022 ◽  
Vol 2 ◽  
Author(s):  
Sami Bolat ◽  
Evangelos Agiannis ◽  
Shih-Chi Yang ◽  
Moritz H. Futscher ◽  
Abdesselam Aribia ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Charge Trapping ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Thermal Budget ◽  
Metal Oxide Thin Film

Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers, which result in hysteretic switching of transistors. This work reports on a novel bilayer dielectric scheme combining aluminum oxide (AlOx) as a positive charge trapping insulator and yttrium aluminum oxide (YAlOx) as a negative charge trapping dielectric to obtain hysteresis free switching in the solution-processed metal-oxide thin-film transistors. Devices were processed at a thermal budget of 250°C, without an encapsulation layer. The presence of H+ and OH− in the AlOx were found responsible for the hysteresis in the switching, which was suppressed successfully with the thickness optimization of the YAlOx in the dielectric stack. Fabricated devices yield ON/OFF ratios of 106, sub-pA level gate leakage currents, a subthreshold swing of 150 mV/decade, and field-effect mobility of 1.5 cm2/V-sec.

scholarly journals Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 965
Author(s):  
Yanwei Li ◽  
Chun Zhao ◽  
Deliang Zhu ◽  
Peijiang Cao ◽  
Shun Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed ◽  
Recent Advances ◽  
Oxide Tfts

Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

Approaches to label-free flexible DNA biosensors using low-temperature solution-processed InZnO thin-film transistors

2014 ◽  
Vol 55 ◽  
pp. 99-105 ◽  
Author(s):  
Joohye Jung ◽  
Si Joon Kim ◽  
Keun Woo Lee ◽  
Doo Hyun Yoon ◽  
Yeong-gyu Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Label Free ◽  
Dna Biosensors ◽  
Solution Processed ◽  
Temperature Solution

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film

Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

2019 ◽  
Vol 33 (5) ◽  
pp. 295-299 ◽  
Author(s):  
Bong-Jin Kim ◽  
Hyung-Jun Kim ◽  
Sung Mok Jung ◽  
Tae-Sik Yoon ◽  
Yong-Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Nitrogen Effect ◽  
Zinc Tin Oxide
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