Origin of Bias-Stress Induced Instability in Organic Thin-Film Transistors with Semiconducting Small-Molecule/Insulating Polymer Blend Channel

2013 ◽  
Vol 5 (5) ◽  
pp. 1625-1629 ◽  
Author(s):  
Ji Hoon Park ◽  
Young Tack Lee ◽  
Hee Sung Lee ◽  
Jun Young Lee ◽  
Kimoon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Polymer Blend ◽  
Small Molecule ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bias Stress

Solution-Processed Small Molecule-Polymer Blend Organic Thin-Film Transistors with Hole Mobility Greater than 5 cm2/Vs

2012 ◽  
Vol 24 (18) ◽  
pp. 2441-2446 ◽  
Author(s):  
Jeremy Smith ◽  
Weimin Zhang ◽  
Rachid Sougrat ◽  
Kui Zhao ◽  
Ruipeng Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Polymer Blend ◽  
Small Molecule ◽  
Thin Film Transistors ◽  
Hole Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processed

Zone-Refinement Effect in Small Molecule−Polymer Blend Semiconductors for Organic Thin-Film Transistors

2011 ◽  
Vol 133 (3) ◽  
pp. 412-415 ◽  
Author(s):  
Yeon Sook Chung ◽  
Nayool Shin ◽  
Jihoon Kang ◽  
Youngeun Jo ◽  
Vivek M. Prabhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Polymer Blend ◽  
Small Molecule ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Refinement Effect

scholarly journals Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Bias Stress

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

Recovery-aware bias-stress degradation model for organic thin-film transistors considering drain and gate bias voltages

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGG08
Author(s):  
Kunihiro Oshima ◽  
Michihiro Shintani ◽  
Kazunori Kuribara ◽  
Yasuhiro Ogasahara ◽  
Takashi Sato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Degradation Model ◽  
Bias Stress ◽  
Stress Degradation
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