Direct Writing Patterns for Electroless Plated Copper Thin Film on Plastic Substrates

2012 ◽  
Vol 4 (10) ◽  
pp. 5109-5113 ◽  
Author(s):  
Ying-Chih Liao ◽  
Zhen-Kai Kao
Keyword(s):  
Thin Film ◽  
Direct Writing ◽  
Copper Thin Film ◽  
Plastic Substrates

Microplasma direct writing of a copper thin film in the atmospheric condition with a novel copper powder electrode

2020 ◽  
Vol 17 (8) ◽  
pp. 2000034
Author(s):  
Tao Wang ◽  
Li Lv ◽  
Liping Shi ◽  
Baohong Tong ◽  
Xingquan Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Powder ◽  
Atmospheric Condition ◽  
Direct Writing ◽  
Copper Thin Film

CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac)

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Copper Thin Film

Characteristics of Indium Tin Zinc Oxide Thin Film Transistors with Plastic Substrates

2018 ◽  
Vol 28 (4) ◽  
pp. 247-253
Author(s):  
Dae-Gyu Yang ◽  
Hyoung-Do Kim ◽  
Jong-Heon Kim ◽  
Hyun-Suk Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Plastic Substrates

Submerged Jet Impingement Cooling of a Nanostructured Plate

2010 ◽  
Author(s):  
Muhsincan Sesen ◽  
Ali Kosar ◽  
Ebru Demir ◽  
Evrim Kurtoglu ◽  
Nazli Kaplan ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Transfer ◽  
Heat Flux ◽  
Silicon Wafer ◽  
Heat Removal ◽  
Jet Impingement ◽  
Wafer Surface ◽  
Small Scale ◽  
Copper Thin Film ◽  
Thin Film Layer

In this paper, the results of a series of heat transfer experiments conducted on a compact electronics cooling device based on single phase jet impingement techniques are reported. Deionized-water is propelled into four microchannels of inner diameter 685 μm which are used as nozzles and located at a nozzle to surface distance of 2.5mm. The generated jet impingement is targeted through these channels towards the surface of a nanostructured plate. This plate of size 20mmx20mm consisted of ∼600 nm long copper nanorod arrays with an average nanorod diameter of ∼150 nm, which were integrated on top of a silicon wafer substrate coated with a copper thin film layer (i.e. Cu-nanorod/Cu-film/Silicon-wafer). Heat removal characteristics induced through jet impingement are investigated using the nanostructured plate and compared to results obtained from a flat plate of copper thin film coated on silicon wafer surface. Enhancement in heat transfer up to 15% using the nanostructured plate has been reported in this paper. Heat generated by small scale electronic devices is simulated using a thin film heater placed on an aluminum base. Surface temperatures are recorded by a data acquisition system with the thermocouples integrated on the surface at various locations. Constant heat flux provided by the film heater is delivered to the nanostructured plate placed on top of the base. Volumetric flow rate and heat flux values were varied in order to better characterize the potential enhancement in heat transfer by nanostructured surfaces.

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

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