High-Gain Silicon-Based InGaN/GaN Dot-in-Nanowire Array Photodetector

ACS Photonics ◽  
2019 ◽  
Vol 6 (5) ◽  
pp. 1289-1294 ◽  
Author(s):  
Anthony Aiello ◽  
A. K. M. Hasibul Hoque ◽  
Md Zunaid Baten ◽  
Pallab Bhattacharya
Keyword(s):  
Nanowire Array ◽  
High Gain ◽  
Array Photodetector ◽  
Silicon Based

A novel high gain silicon based spin transistor

2004 ◽  
Author(s):  
C.L. Dennis ◽  
C. Sirisathitkul ◽  
G.J. Ensell ◽  
J.F. Gregg ◽  
S.M. Thompson
Keyword(s):  
High Gain ◽  
Spin Transistor ◽  
Silicon Based

Self-powered, superior high gain silicon-based near-infrared photosensing for low-power light communication

Nano Energy ◽  
2020 ◽  
Vol 70 ◽  
pp. 104544 ◽  
Author(s):  
Baoyu Wang ◽  
Yu Zhu ◽  
Jianqi Dong ◽  
Jian Jiang ◽  
Qiao Wang ◽  
...  
Keyword(s):  
Low Power ◽  
Near Infrared ◽  
High Gain ◽  
Self Powered ◽  
Silicon Based

Hybrid Permeable Metal-Base Transistor with Large Common-Emitter Current Gain and Low Operational Voltage

2008 ◽  
Vol 8 (4) ◽  
pp. 2037-2043 ◽  
Author(s):  
Chengang Feng ◽  
Mingdong Yi ◽  
Shunyang Yu ◽  
Ivo A. Hümmelgen ◽  
Tong Zhang ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
High Gain ◽  
Organic Light Emitting Diodes ◽  
Current Gain ◽  
Metal Base ◽  
Light Emitting ◽  
Emitter Current ◽  
Organic Light ◽  
Silicon Based ◽  
Molecular Semiconductors

We demonstrate the suitability of N,N′-diphenyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.

Effect of energy filtering on micro-diffraction in the SEM

1994 ◽  
Vol 52 ◽  
pp. 604-605
Author(s):  
James F. Mancuso ◽  
Leo A. Fama ◽  
William B. Maxwell ◽  
Jerry L. Lehman ◽  
Hasso Weiland ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Ccd Camera ◽  
High Gain ◽  
Microchannel Plate ◽  
Electrostatic Energy ◽  
Energy Filtering ◽  
Electron Channelling ◽  
Low Energy Electrons ◽  
Low Sensitivity ◽  
Angular Field Of View

Micro-diffraction based crystallography is essential to the design and development of many classes of ‘crafted materials’. Although the scanning electron microscope can provide crystallographic information with high spatial resolution, its current utility is severely limited by the low sensitivity of existing diffraction techniques (ref: Dingley). Previously, Joy showed that energy filtering increased contrast and pattern visibility in electron channelling. This present paper discribes the effect of energy filtering on EBSP sensitivity and backscattered SEM imaging.The EBSP detector consisted of an electron energy filter, a microchannel plate detector, a phosphor screen, optical coupler, and a slow scan CCD camera. The electrostatic energy filter used in this experiment was constructed as a cone with 5 coaxial electrodes. The angular field-of-view of the filter was approximately 38°. The microchannel plate, which was the initial sensing component, had high gain and had 50% to 80% detection efficiency for the low energy electrons that passed through the retarding field filter.

Equivalent Noise Dose Obtained Through Hearing Aids in the Classrooms of Hearing-Impaired Children

1990 ◽  
Vol 21 (3) ◽  
pp. 147-150
Author(s):  
Ronald A. Wilde
Keyword(s):  
Hearing Aids ◽  
High Gain ◽  
Hearing Impaired ◽  
Deaf Children ◽  
Impaired Children ◽  
Very High ◽  
Hearing Impaired Children

A commercial noise dose meter was used to estimate the equivalent noise dose received through high-gain hearing aids worn in a school for deaf children. There were no significant differences among nominal SSPL settings and all SSPL settings produced very high equivalent noise doses, although these are within the parameters of previous projections.

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