scholarly journals Tuning Intraband and Interband Transition Rates via Excitonic Correlation in Low-Dimensional Semiconductors

ACS Photonics ◽  
2018 ◽  
Vol 5 (9) ◽  
pp. 3680-3688 ◽  
Author(s):  
Josep Planelles ◽  
Alexander W. Achtstein ◽  
Riccardo Scott ◽  
Nina Owschimikow ◽  
Ulrike Woggon ◽  
...  
Keyword(s):  
Interband Transition ◽  
Transition Rates ◽  
Low Dimensional

Thermoelectric Properties of PbSr(Se,Te)-Based Low Dimensional Structures

2000 ◽  
Vol 626 ◽  
Author(s):  
Harald Beyer ◽  
Joachim Nurnus ◽  
Harald Böttner ◽  
Armin Lambrecht ◽  
Lothar Schmitt ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Evaluation Method ◽  
Interband Transition ◽  
Multiple Quantum Well ◽  
Calculated Data ◽  
Multiple Quantum ◽  
Ir Transmission ◽  
Low Dimensional

ABSTRACTThermoelectric properties of low dimensional structures based on PbTe/PbSrTe-multiple quantum-well (MQW)-structures with regard to the structural dimensions, doping profiles and levels are presented. Interband transition energies and barrier band-gap are determined from IR-transmission spectra and compared with Kronig-Penney calculations. The influence of the data evaluation method to obtain the 2D power factor will be discussed. The thermoelectrical data of our layers show a more modest enhancement in the power factor σS2 compared with former publications and are in good agreement with calculated data from Broido et al. [5]. The maximum allowed doping level for modulation doped MQW structures is determined. Thermal conductivity measurements show that a ZT enhancement can be achieved by reducing the thermal conductivity due to interface scattering. Additionally promising lead chalcogenide based superlattices for an increased 3D figure of merit are presented.

scholarly journals Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector

2018 ◽  
Vol 67 (12) ◽  
pp. 128101
Author(s):  
Liu Jie ◽  
Wang Lu ◽  
Sun Ling ◽  
Wang Wen-Qi ◽  
Wu Hai-Yan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Interband Transition ◽  
Infrared Detector ◽  
Low Dimensional

Valence electron energy loss spectroscopy in reflection geometry

1989 ◽  
Vol 47 ◽  
pp. 378-379
Author(s):  
J. Liu ◽  
J. M. Cowley
Keyword(s):  
Energy Loss ◽  
Valence Electron ◽  
Interband Transition ◽  
Specular Reflection ◽  
Three Dimensional ◽  
Electron Excitation ◽  
Transmission Electron ◽  
Yield Information ◽  
Valence Bands ◽  
Excitation Processes

The low energy loss region of a EELS spectrum carries information about the valence electron excitation processes (e.g., collective excitations for free electron like materials and interband transitions for insulators). The relative intensities and the positions of the interband transition energy loss peaks observed in EELS spectra are determined by the joint density of states (DOS) of the initial and final states of the excitation processes. Thus it is expected that EELS in reflection mode could yield information about the perturbation of the DOS of the conduction and valence bands of the bulk crystals caused by the termination of the three dimensional periodicity at the crystal surfaces. The experiments were performed in a Philipps 400T transmission electron microscope operated at 120 kV. The reflection EELS spectra were obtained by a Gatan 607 EELS spectrometer together with a Tracor data acquisition system and the resolution of the spectrometer was about 0.8 eV. All the reflection spectra are obtained from the specular reflection spots satisfying surface resonance conditions.

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