Sodium Chloride Protected CdHgTe Quantum Dot Based Solid-State Near-Infrared Luminophore for Light-Emitting Devices and Luminescence Thermometry

ACS Photonics ◽  
2017 ◽  
Vol 4 (6) ◽  
pp. 1459-1465 ◽  
Author(s):  
Sergii Kalytchuk ◽  
Marcus Adam ◽  
Ondrej Tomanec ◽  
Radek Zbořil ◽  
Nikolai Gaponik ◽  
...  
Keyword(s):  
Sodium Chloride ◽  
Solid State ◽  
Quantum Dot ◽  
Near Infrared ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Luminescence Thermometry

High-Performance CsPbX3 Perovskite Quantum-Dot Light-Emitting Devices via Solid-State Ligand Exchange

2018 ◽  
Vol 1 (2) ◽  
pp. 488-496 ◽  
Author(s):  
Yo-Han Suh ◽  
Taeyun Kim ◽  
Jin Woo Choi ◽  
Chang-Lyoul Lee ◽  
Jongnam Park
Keyword(s):  
Solid State ◽  
Quantum Dot ◽  
Ligand Exchange ◽  
High Performance ◽  
Light Emitting ◽  
Light Emitting Devices

Enhanced Near‐Infrared Perovskite Light‐Emitting Devices by Introducing Choline Chloride Layer

2021 ◽  
pp. 2100636
Author(s):  
Xiaoxiao Xu ◽  
Ke Xiao ◽  
Guozhi Hou ◽  
Yangyi Zhang ◽  
Ting Zhu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Choline Chloride ◽  
Light Emitting ◽  
Light Emitting Devices

High-brightness perovskite quantum dot light-emitting devices using inkjet printing

2021 ◽  
Vol 93 ◽  
pp. 106168
Author(s):  
Chunbo Zheng ◽  
Xin Zheng ◽  
Chen Feng ◽  
Songman Ju ◽  
Zhongwei Xu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Inkjet Printing ◽  
High Brightness ◽  
Light Emitting ◽  
Light Emitting Devices

Photoluminescence Properties of Ca3Si2O7: Pr3+ Orange-Red Phosphors Prepared by High-Temperature Solid-State Method

2018 ◽  
Vol 73 (6) ◽  
pp. 555-558 ◽  
Author(s):  
Zhi-Qing Peng ◽  
Rong Chen ◽  
Wen-Lin Feng
Keyword(s):  
Crystal Structure ◽  
High Temperature ◽  
Solid State ◽  
Solid State Method ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Red Phosphors ◽  
Typical Sample ◽  
State Method ◽  
Xrd Patterns

AbstractNovel luminescent materials Ca3-xSi2O7: xPr3+ were successfully prepared by the high-temperature solid-state method. The crystal structure, morphology, and optical spectrum were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectroscopy, respectively. The XRD patterns of the samples indicate that the crystal structure is monoclinic symmetry. The SEM shows that the selected sample has good crystallinity although its appearance is irregular and scalelike. The peak of the excitation spectrum of the sample is located at around 449 nm, corresponding to 3H4→3P2 transition of Pr3+. The peak of the emission spectrum of the sample is situated at around 612 nm which is attributed to 3P0→3H6 transition of Pr3+, and the colour is orange-red. The optimum concentration for Pr3+ replaced Ca2+ sites in Ca3Si2O7: Pr3+ is 0.75 mol%. The lifetime (8.48 μs) of a typical sample (Ca2.9925Pr0.0075)Si2O7 is obtained. It reveals that orange-red phosphors Ca3-xSi2O7: xPr3+ possess remarkable optical properties and can be used in white light emitting devices.

Air-processed stable near-infrared Si-based perovskite light-emitting devices with efficiency exceeding 7.5%

2022 ◽  
Author(s):  
Xiaoxiao Xu ◽  
Ke Xiao ◽  
Guozhi Hou ◽  
Yu Zhu ◽  
Ting Zhu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Ambient Air ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Composite Layers

Two composite layers are used to enhance the efficiency of Si-based near-infrared perovskite light-emitting devices, which are produced in ambient air, and the external quantum efficiency increased to 7.5%.

Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications

2021 ◽  
Author(s):  
Yan Zhang ◽  
Yanjie Liang ◽  
Shihai Miao ◽  
Dongxun Chen ◽  
Shao Yan ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Near Infrared ◽  
Light Emitting Diode ◽  
Solid State Reaction Method ◽  
Luminescence Properties ◽  
Light Emitting ◽  
Reaction Method ◽  
Simple Solid State Reaction

A series of Cr3+-doped BaMSi3O9 (M = Zr, Sn, Hf) near-infrared emitting phosphors with tunable luminescence properties have been successfully synthesized by using a simple solid-state reaction method. The developed...

The Effect of Particle Size on the Charge Balance Property of Quantum Dot Light-Emitting Devices Using Zinc Oxide Nanoparticles

2021 ◽  
Vol 21 (7) ◽  
pp. 3795-3799
Author(s):  
Mi-Young Ha ◽  
Chang Kyo Kim ◽  
Dae-Gyu Moon
Keyword(s):  
Particle Size ◽  
Zinc Oxide ◽  
Quantum Dot ◽  
Zinc Oxide Nanoparticles ◽  
Transport Layer ◽  
Oxide Nanoparticles ◽  
Zno Nps ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Maximum Current

Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of different particle sizes on the electrical and optical properties of QLEDs. We synthesized ZnO NPs into the size of 3 nm and 8 nm respectively and used them as an inorganic ETL of QLEDs. The particle size and crystal structure of the synthesized ZnO NPs were verified by Transmission electron microscopy (TEM) analysis and X-ray pattern analysis. The device with 8 nm ZnO NPs ETL exhibited higher efficiency than the 3 nm ZnO NPs ETL device in the single hole transport layer (HTL) QLEDs. The maximum current efficiency of 19.0 cd/A was achieved in the device with 8 nm ZnO NPs layer. We obtained the maximum current efficiency of 17.5 cd/A in 3 nm ZnO NPs device by optimizing bilayer HTL and ZnO NPs ETL.

Recent advances in quantum dot-based light-emitting devices: Challenges and possible solutions

2019 ◽  
Vol 24 ◽  
pp. 69-93 ◽  
Author(s):  
Zhiwen Yang ◽  
Mengyu Gao ◽  
Weijie Wu ◽  
Xuyong Yang ◽  
Xiao Wei Sun ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Recent Advances
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