Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon

ACS Photonics ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 204-210 ◽  
Author(s):  
Bei Shi ◽  
Si Zhu ◽  
Qiang Li ◽  
Yating Wan ◽  
Evelyn L. Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Continuous Wave ◽  
Optically Pumped ◽  
Microdisk Lasers

scholarly journals InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2315
Author(s):  
Alexey E. Zhukov ◽  
Natalia V. Kryzhanovskaya ◽  
Eduard I. Moiseev ◽  
Anna S. Dragunova ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Elevated Temperatures ◽  
Continuous Wave ◽  
Electrical Contact ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Constant Current ◽  
Surface Protection ◽  
Microdisk Lasers

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.

Optically pumped InAs quantum dot microdisk lasers

2000 ◽  
Vol 76 (24) ◽  
pp. 3519-3521 ◽  
Author(s):  
H. Cao ◽  
J. Y. Xu ◽  
W. H. Xiang ◽  
Y. Ma ◽  
S.-H. Chang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optically Pumped ◽  
Microdisk Lasers ◽  
Inas Quantum Dot

scholarly journals Optically-pumped InAs/GaAs quantum-dot microdisk lasers monolithically grown on on-axis Si (001) substrate

2019 ◽  
Author(s):  
Taojie Zhou ◽  
Mingchu Tang ◽  
Guohong Xiang ◽  
Siming Chen ◽  
Huiyun Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optically Pumped ◽  
Microdisk Lasers ◽  
Gaas Quantum Dot

High-temperature continuous wave operation (up to 100°C) of InAs/InGaAs quantum dot electrically injected microdisk lasers

2016 ◽  
Author(s):  
N. V. Kryzhanovskaya ◽  
E. I. Moiseev ◽  
Yu. V. Kudashova ◽  
F. I. Zubov ◽  
M. M. Kulagina ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Continuous Wave ◽  
Microdisk Lasers ◽  
Continuous Wave Operation

scholarly journals Room temperature continuous wave operation of injection quantum dot microdisk lasers

2015 ◽  
Vol 643 ◽  
pp. 012002 ◽  
Author(s):  
N V Kryzhanovskaya ◽  
M V Maximov ◽  
A M Nadtochiy ◽  
S A Blokhin ◽  
M A Bobrov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Continuous Wave ◽  
Microdisk Lasers ◽  
Continuous Wave Operation

Mechanism of microlens formation in quantum dot glasses under continuous-wave laser irradiation

2001 ◽  
Vol 89 (12) ◽  
pp. 8273-8278 ◽  
Author(s):  
Yuri Kaganovskii ◽  
Irena Antonov ◽  
Fredrick Bass ◽  
Michael Rosenbluh ◽  
Audrey Lipovskii
Keyword(s):  
Quantum Dot ◽  
Laser Irradiation ◽  
Continuous Wave ◽  
Continuous Wave Laser ◽  
Wave Laser

Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

2006 ◽  
Vol 89 (4) ◽  
pp. 041113 ◽  
Author(s):  
T. Kettler ◽  
L. Ya. Karachinsky ◽  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
G. Fiol ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Single Mode ◽  
Quantum Dot Lasers ◽  
Continuous Wave Operation

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

1999 ◽  
Vol 11 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
V.M. Ustinov ◽  
Yu.M. Shernyakov ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Diode Laser ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Long Wavelength ◽  
Continuous Wave Operation
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