scholarly journals Electroabsorption Spectroscopy Measurements of the Exciton Binding Energy, Electron–Hole Reduced Effective Mass, and Band Gap in the Perovskite CH3NH3PbI3

ACS Photonics ◽  
2016 ◽  
Vol 3 (6) ◽  
pp. 1060-1068 ◽  
Author(s):  
Mark E. Ziffer ◽  
Joseph C. Mohammed ◽  
David S. Ginger
Keyword(s):  
Binding Energy ◽  
Band Gap ◽  
Effective Mass ◽  
Exciton Binding Energy ◽  
Energy Electron ◽  
Electron Hole ◽  
Electroabsorption Spectroscopy

scholarly journals Capturing excitonic and polaronic effects in lead iodide perovskites from many-body perturbation theory

2021 ◽  
Author(s):  
Pooja Basera ◽  
Arunima Singh ◽  
Deepika Gill ◽  
Saswata Bhattacharya
Keyword(s):  
Optical Properties ◽  
Perturbation Theory ◽  
Binding Energy ◽  
Electronic Properties ◽  
Effective Mass ◽  
Exciton Binding Energy ◽  
Many Body ◽  
Energy Materials ◽  
Lead Iodide ◽  
Many Body Perturbation Theory

Lead iodide perovskites have attracted considerable interest as promising energy-materials. However, till date, several key electronic properties such as optical properties, effective mass, exciton binding energy and the radiative exciton...

Nanocrystalline Silicon for Optoelectronic Applications

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 33-38 ◽  
Author(s):  
Leonid Tsybeskov
Keyword(s):  
Binding Energy ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Free Exciton ◽  
Nanocrystalline Silicon ◽  
Momentum Conservation ◽  
Exciton Binding Energy ◽  
Electron Hole ◽  
Energy Plus ◽  
Hole Recombination

Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton self-annihilation with the exciton binding energy of ~11 meV. The TO-phonon contribution in conservation processes is most significant, and the main PL peak (~1.1 eV) is shifted from the bandgap value (~1.17 eV) by ~70 meV—that is, the exciton binding energy plus TO-phonon energy (Figure 1a).

Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity

2002 ◽  
Vol 91 (4) ◽  
pp. 2553-2555 ◽  
Author(s):  
Jun Shao ◽  
Achim Dörnen ◽  
Rolf Winterhoff ◽  
Ferdinand Scholz
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Exciton Binding Energy

Tuning the binding energy of excitons in the MoS2 monolayer by molecular functionalization and defective engineering

2020 ◽  
Vol 22 (21) ◽  
pp. 11936-11942
Author(s):  
Kangli Wang ◽  
Beate Paulus
Keyword(s):  
Absorption Spectrum ◽  
Binding Energy ◽  
Optical Absorption ◽  
Band Gap ◽  
Optical Absorption Spectrum ◽  
Exciton Binding Energy ◽  
Electronic Band ◽  
Mos2 Monolayer ◽  
Electronic Band Gap

Using the DFT-GW-BSE method, we analyze how the electronic band gap, optical absorption spectrum and exciton binding energy of the MoS2 monolayer are influenced by NO and C3H3N3 molecules and S-defects.

scholarly journals Photoelectrochemical and theoretical investigation of the photocatalytic activity of TiO2 : N

RSC Advances ◽  
2016 ◽  
Vol 6 (92) ◽  
pp. 89687-89698 ◽  
Author(s):  
Gabriela Byzynski Soares ◽  
Renan Augusto Pontes Ribeiro ◽  
Sergio Ricardo de Lazaro ◽  
Caue Ribeiro
Keyword(s):  
Photocatalytic Activity ◽  
Band Gap ◽  
Effective Mass ◽  
Theoretical Investigation ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
N Doping ◽  
Hole Recombination

In N-doping on TiO2 nanomaterial occurs a big decrease of band-gap (1 eV); however, its photocatalysis is low. We clarify such fact from effective mass, i.e., the electron–hole recombination is more than creation of electron–hole pair.

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