Large Quadratic Electro-Optic Effect of the PLZT Thin Films for Optical Communication Integrated Devices

ACS Photonics ◽  
2020 ◽  
Vol 7 (11) ◽  
pp. 3166-3176
Author(s):  
Can Huang ◽  
Dongni Li ◽  
Tiancheng He ◽  
Yedong Peng ◽  
Wei Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Communication ◽  
Integrated Devices ◽  
Electro Optic ◽  
Plzt Thin Films

Electro-Optic Properties of (100)-Oriented (Pb,La(Zr,Ti)O3 Thin Film

2012 ◽  
Vol 185 ◽  
pp. 60-64
Author(s):  
Min Min Zhu ◽  
Ze Hui Du ◽  
Jan Ma
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Infrared Light ◽  
Single Crystal Substrate ◽  
Light Wavelength ◽  
Prism Coupler ◽  
Electro Optic ◽  
Crystal Substrate ◽  
Tm Model ◽  
Plzt Thin Films

(100)-oriented PLZT ((Pb1-x, Lax) (Zry,Ti1-y)1-x/4O3, x/y=9/65) films of up to ~ 1.23 μm have been developed on LaAlO3single crystal substrate by magnetron sputtering. The as-grown PLZT thin films exhibit high optical transparency in visible and near-infrared light wavelength and high quadratic (Kerr) EO coefficients. Prism coupler measurements reveal that the PLZT thin films possess large refractive index, as high as 2.524 in TE model and 2.481 in TM model. The transparency of >70% in the range of λ= 500-1200 nm, the optic band gap of 3.42 eV and the quadratic electro-optic (EO) coefficient of 3.38 x 10-17(m/V)2have been measured in the films. Due to the large EO coefficient and the micrometric thickness, the as-developed PLZT films have great potential in developing longitudinal-or transverse-type EO devices in electric and optic field

Electro-optic properties of sol-gel derived PZT and PLZT thin films

1995 ◽  
Vol 29 (1-4) ◽  
pp. 327-330 ◽  
Author(s):  
G. Teowee ◽  
J.T. Simpson ◽  
Tianji Zhao ◽  
M. Mansuripur ◽  
J.M. Boulton ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electro Optic ◽  
Plzt Thin Films

Electro‐optic effects of PLZT thin films

1977 ◽  
Vol 31 (7) ◽  
pp. 433-434 ◽  
Author(s):  
Makoto Ishida ◽  
Hiroyuki Matsunami ◽  
Tetsuro Tanaka
Keyword(s):  
Thin Films ◽  
Electro Optic ◽  
Plzt Thin Films

Optical Phase and Amplitude Modulation in (9/65/35) Pb-La-Zr-Ti-O Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
D. Young ◽  
H. Li ◽  
S. Choopun ◽  
L. Wang ◽  
L. Salamanca-Riba ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Optical Modulator ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Electro Optic ◽  
Oscillating Electric Field ◽  
Normal Transmission ◽  
Plzt Thin Films ◽  
Theoretical Considerations

AbstractElectro-Optic Pb0.91gLa0.09Zr0.65Ti0.35O3 (PLZT) thin films are studied for transverse optical modulator applications. PLZT thin films were grown by pulsed laser ablation on MgO and GaAs substrates. Structural characterization by x-ray diffraction, transmission electron microscopy, Rutherford backscattering, and sputter Auger electron profiling indicate polycrystalline, phase pure PLZT with evidence of interdiffusion and approximately 20nm RMS surface roughness.Single PLZT thin films, grown on MgO substrates with a SrTiO3 (STO) buffer layer, were fabricated into simple modulator structures for electro-optical characterization.Measurements were performed in normal transmission mode. Application of an oscillating electric field across the PLZT layer produced optical amplitude and phase modulation.The application of an oscillating electric field of frequency f across the PLZT has been observed to produce f and 2f frequency modulation in both the phase and amplitude of the output light. Theoretical considerations show that this can be attributed to the quadratic nature of the electro-optic effect in PLZT.

Novel electro-optic properties of epitaxially grown (Pb, La)(Zr, Ti)O3 (PLZT) thin films derived by advanced sol–gel methods

2008 ◽  
Vol 34 (4) ◽  
pp. 979-983 ◽  
Author(s):  
K. Uchiyama ◽  
T. Shiosaki ◽  
T. Kosaka ◽  
A. Kasamatsu ◽  
M. Echizen
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electro Optic ◽  
Plzt Thin Films

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

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