scholarly journals Continuous Growth of Highly Reproducible Single-Layer Graphene Deposition on Cu Foil by Indigenously Developed LPCVD Setup

ACS Omega ◽  
2019 ◽  
Vol 4 (2) ◽  
pp. 2893-2901
Author(s):  
Pradeep Kumar Kashyap ◽  
Indu Sharma ◽  
Bipin Kumar Gupta
Keyword(s):  
Single Layer ◽  
Single Layer Graphene ◽  
Continuous Growth ◽  
Layer Graphene ◽  
Cu Foil

scholarly journals Raman modes in transferred bilayer CVD graphene

Open Physics ◽  
2015 ◽  
Vol 13 (1) ◽  
Author(s):  
Ahti Niilisk ◽  
Tauno Kahro ◽  
Valter Kiisk ◽  
Mihkel Rähn ◽  
Harry Alles ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Cvd Graphene ◽  
Raman Spectroscopic ◽  
Raman Spectroscopic Study ◽  
Layer Graphene ◽  
Raman Modes ◽  
Twisted Bilayer Graphene ◽  
Cu Foil

AbstractA systematic experimental Raman spectroscopic study of twisted bilayer graphene (tBLG) domains localized inside wide-area single layer graphene (SLG) produced by low-pressure CVD on Cu foil and transferred onto SiO

scholarly journals Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

Nanoscale ◽  
2013 ◽  
Vol 5 (3) ◽  
pp. 1221 ◽  
Author(s):  
Yong Seung Kim ◽  
Jae Hong Lee ◽  
Young Duck Kim ◽  
Sahng-Kyoon Jerng ◽  
Kisu Joo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Graphene Synthesis ◽  
Cu Foil ◽  
Effective Hydrogen

scholarly journals Influence of growth kinetics on graphene domains shape under atmospheric pressure chemical vapor deposition

2020 ◽  
Vol 5 (3-4) ◽  
pp. 75-81
Author(s):  
Mopeli Samuel Fabiane ◽  
Moshawe Jack Madito ◽  
Ncholu Manyala
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Cu Foil

Abstract In this work, the role of gas kinetics in the growth of lobed graphene domains by atmospheric pressure chemical vapor deposition (AP-CVD) is elucidated by sandwiching Cu foil between Si/SiO2 wafers. Two different growths were carried out: (1) A Cu foil was placed at the center of a quartz tube in AP-CVD for graphene growth and (2) another Cu foil was sandwiched between Si/SiO2 wafers to alter the nucleation growth kinetics of graphene domains to mimic those in low-pressure chemical vapor deposition (LP-CVD). From the scanning electron microscopy (SEM) images, the graphene domains of the sandwiched Cu foil displayed mostly four-lobed, parallel-sided domains which are usually obtained under LP-CVD as compared to Cu foil without sandwiching which showed typical hexagonal graphene domains of AP-CVD. The Raman spectroscopy confirmed that the domains are single-layer graphene. An electron backscatter diffraction (EBSD) showed that the Cu foil is predominantly (001). The results of this study agree with the theoretical predictions of growth kinetics in graphene synthesis by CVD and showed that it is possible to obtain single-layer graphene domains which are usually obtained under LP-CVD by restricting the gas flux through the boundary layer. Graphic abstract

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

Sign in / Sign up

Export Citation Format

Share Document