scholarly journals Band-Gap Tuning of Organic–Inorganic Hybrid Palladium Perovskite Materials for a Near-Infrared Optoelectronics Response

ACS Omega ◽  
2018 ◽  
Vol 3 (10) ◽  
pp. 13960-13966 ◽  
Author(s):  
Huawei Zhou ◽  
Xiaolei Cui ◽  
Cang Yuan ◽  
Jiawen Cui ◽  
Shaozhen Shi ◽  
...  
2018 ◽  
Vol 10 (18) ◽  
pp. 15920-15925 ◽  
Author(s):  
By Hyeonggeun Yu ◽  
Yuanhang Cheng ◽  
Menglin Li ◽  
Sai-Wing Tsang ◽  
Franky So

2017 ◽  
Vol 139 (32) ◽  
pp. 11117-11124 ◽  
Author(s):  
Rohit Prasanna ◽  
Aryeh Gold-Parker ◽  
Tomas Leijtens ◽  
Bert Conings ◽  
Aslihan Babayigit ◽  
...  

2021 ◽  
Author(s):  
Amita Ummadisingu ◽  
Simone Meloni ◽  
Alessandro Mattoni ◽  
Wolfgang Tress ◽  
Michael Grätzel

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.


2003 ◽  
Vol 21 (1-3) ◽  
pp. 199-203 ◽  
Author(s):  
Do-Hoon Hwang ◽  
Nam Sung Cho ◽  
Byung-Jun Jung ◽  
Hong-Ku Shim ◽  
Jeong-Ik Lee ◽  
...  

2005 ◽  
Vol 11 (11) ◽  
pp. 3325-3341 ◽  
Author(s):  
Nicolle N. P. Moonen ◽  
William C. Pomerantz ◽  
Robin Gist ◽  
Corinne Boudon ◽  
Jean-Paul Gisselbrecht ◽  
...  

2017 ◽  
Vol 5 (46) ◽  
pp. 12163-12171 ◽  
Author(s):  
Yinghui He ◽  
Jesse T. E. Quinn ◽  
Dongliang Hou ◽  
Jenner H.L. Ngai ◽  
Yuning Li

A novel small bandgap donor–acceptor polymer with a very small band gap of 0.95 eV shows promising photoresponse under near infrared light in phototransistors.


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