scholarly journals Millimeter-Scale Continuous Film of MoS2 Synthesized Using a Mo, Na, and Seeding Promoter-Based Coating as a Solid Precursor

ACS Omega ◽  
2021 ◽  
Author(s):  
Maddumage Don Sandeepa Lakshad Wimalananda ◽  
Jae-Kwan Kim ◽  
Sung Woon Cho ◽  
Ji-Myon Lee
Keyword(s):  
2005 ◽  
Vol 38 (1) ◽  
pp. 211-216 ◽  
Author(s):  
Pang-Hung Liu ◽  
Kuei-Jung Chao ◽  
Xing-Jian Guo ◽  
Kuo-Ying Huang ◽  
Yen-Ru Lee ◽  
...  

A continuous silica film with well aligned mesochannels parallel to the Si(001) surface was found to be formed through sol–gel dip-coating of a silica precursor with nonionic ethylene oxide surfactant. Two two-dimensional mesoporous structures in centered and non-centered rectangular symmetries and with the short axes of elongated ellipsoidal pores normal to the surface were observed by X-ray and electron diffraction. Detailed transmission electron microscopy investigations were employed to view the direction dependence of the channel or pore packing in the continuous film.


1995 ◽  
Vol 402 ◽  
Author(s):  
Adli A. Saleh ◽  
D. Peterson

AbstractA study of the room-temperature growth of ultrathin Ti films (up to 7 ML) on clean and atomically flat Si(111)- (7×7) surfaces using Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) is presented. The variations in the Auger signal due to Si L2.3VV with binding energy of 92 eV are used to model the growth morphology of this system. These measurements indicate the growth of an initial disordered and continuous Ti film of up to 1.6 ML in thickness, where the LEED pattern completely disappears and the Si Auger signal is strongly attenuated. As more Ti is deposited, this is followed by the disintegration of the continuous film and the formation of an intermixed Ti/Si film. This is evidenced by a change in the slope of the Auger signal time (AST) plot, and the reappearance of the LEED pattern. The modification in the overlayer composition for films thicker than 1.6 ML is confirmed by a change in the Si L2.3VV Auger peak that resembles the peak shape due to TiSi2.


Author(s):  
В.М. Капралова ◽  
И.Ю. Сапурина ◽  
Н.Т. Сударь

AbstractIt is shown that the method for the growth of conducting polyaniline nanotubes, based on the direct polymerization of aniline on the surface of channels in track membranes, can be used to produce nanotubes with a given conductivity. An island-type film with a channel resistance of ~10^19 Ω is formed during the initial stage of polymerization (up to 2 min). As the polymerization duration increases to 3 min, the channel resistance falls by more than 10 orders of magnitude. This is attributed to the formation of a continuous film on the channel surface, i.e., a nanotube is formed. With the polymerization duration increasing further, the channel (nanotube) resistance gradually decreases to ~10^19 Ω at 10 min. The conductivity of polyaniline during the formation of a hollow nanotube is estimated to be 0.01–0.04 S/cm. If the nanotube is completely filled with polyaniline, the conductivity increases to ~0.2 S/cm.


2007 ◽  
Vol 133 (1-3) ◽  
pp. 229-237 ◽  
Author(s):  
Akanksha ◽  
K.K. Pant ◽  
V.K. Srivastava

2000 ◽  
Author(s):  
Marcelo Mulato ◽  
Francesco Lemmi ◽  
Rachel Lau ◽  
Jeng-Ping Lu ◽  
Jackson Ho ◽  
...  

1999 ◽  
Vol 596 ◽  
Author(s):  
H. Fujisawa ◽  
M. Shimizu ◽  
H. Niu ◽  
K. Honda ◽  
S Ohtani

AbstractDomain structure and growth mechanism of PbTiO3 thin films were investigated using a transmission electron microscopy(TEM) from the viewpoint of size effects. At initial growth stage of (111)-oriented PbTiO3 films prepared by metalorganic chemical vapor deposition(MOCVD), triangle-shaped islands were grown on Pt(111)/SiO2/Si before becoming a continuous film. Triangular islands grew gradually in a lateral dimension. This means that PbTiO3 films grew two-dimensionally at initial growth stage. In cross-sectional TEM photomicrographs, (101)-twin boundaries (90° domain walls) and inclination of {110} or {101}-plane were observed in PbTiO3 islands. This result indicates that such small PbTiO3 islands have a tetragonal structure and could have spontaneous polarization. The minimum island which had 90° domain walls was 10nm high and 18nm wide.


2006 ◽  
Vol 45 ◽  
pp. 1568-1577 ◽  
Author(s):  
S.M. Hong ◽  
T. Akashi ◽  
J.T. McKeown ◽  
J.D. Sugar ◽  
C.C. Bartlow ◽  
...  

Transient-liquid-phase (TLP) joining and liquid-film-assisted joining (LFAJ) exploit thin metallic films that melt at relatively low temperatures as part of a multilayer, multimaterial interlayer to enable joining at reduced temperatures. These methods are attractive for assemblies that include temperature-sensitive components, however, unlike conventional low-temperature joining methods, they also offer the potential for service at temperatures approaching or even exceeding the original joining temperature. In successful TLP joining and LFAJ, the wetting behavior of the liquid plays a critical role. In TLP joining, the liquid ultimately disappears during joining due to interdiffusion and chemical homogenization. In contrast, in LFAJ the liquid persists at the joining temperature, provides a high-diffusivity transport path that accelerates joint formation, and ultimately undergoes a morphological transition that disrupts the initially continuous film. The resulting isolated liquid droplets solidify on cooling. Current studies of these joining methods are described, and promising future directions are indicated.


2007 ◽  
Vol 31 ◽  
pp. 120-122
Author(s):  
Kannappan Santhakumar ◽  
D.H. Kang ◽  
Jae Chul Song ◽  
Dong Wook Kim ◽  
J.S. Kim ◽  
...  

Vertically aligned GaN nanocolumn arrays were grown by molecular beam epitaxy on Gallium coated silicon substrate. The dense packing of the NCs gives them the appearance of a continuous film in surface view, but cross-sectional analysis shows them to be isolated nanostructures. The GaN nanocolumns have uniform diameters of 85 nm, lengths up to 720 nm and possess a pyramid like tip. Photoluminescence measurements of NCs show excitonic emission with a dominant, narrow peak centered at 363 nm and FWHM of 68 meV. From the Raman spectrum, peaks at 566.9 and 730 cm-1 are assigned to the E2 and A1(LO) GaN phonons modes which clearly indicates that the grown nanocolumns are highly crystalline. The grown nanocolumns are highly oriented and perpendicular to the growth surface.


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