Direct Electrohydrodynamic Patterning of High-Performance All Metal Oxide Thin-Film Electronics

ACS Nano ◽  
2019 ◽  
Vol 13 (12) ◽  
pp. 13957-13964 ◽  
Author(s):  
You Liang ◽  
Jason Yong ◽  
Yang Yu ◽  
Ampalavanapillai Nirmalathas ◽  
Kumaravelu Ganesan ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Thin Film Electronics ◽  
Electrohydrodynamic Patterning

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

2011 ◽  
Vol 10 (5) ◽  
pp. 382-388 ◽  
Author(s):  
Myung-Gil Kim ◽  
Mercouri G. Kanatzidis ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
High Performance ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Thin Film Electronics

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities

2016 ◽  
Vol 4 (47) ◽  
pp. 11298-11304 ◽  
Author(s):  
Sooji Nam ◽  
Jong-Heon Yang ◽  
Sung Haeng Cho ◽  
Ji Hun Choi ◽  
Oh-Sang Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.

P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers

2016 ◽  
Vol 47 (1) ◽  
pp. 1151-1154 ◽  
Author(s):  
Jong-Heon Yang ◽  
Ji Hun Choi ◽  
Jae-Eun Pi ◽  
Hee-Ok Kim ◽  
Eun-Suk Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Active Layers ◽  
Metal Oxide Thin Film

Modulation of aqueous precursor solution temperature for the fabrication of high-performance metal oxide thin-film transistors

2015 ◽  
Vol 8 (8) ◽  
pp. 081101 ◽  
Author(s):  
Keun Ho Lee ◽  
Jee Ho Park ◽  
Young Bum Yoo ◽  
Sun Woong Han ◽  
Se Jong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Precursor Solution ◽  
Oxide Thin Film ◽  
Solution Temperature ◽  
Metal Oxide Thin Film
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