scholarly journals Non-Arrhenius Reaction-Diffusion Kinetics for Protein Inactivation over a Large Temperature Range

ACS Nano ◽  
2019 ◽  
Vol 13 (8) ◽  
pp. 8669-8679 ◽  
Author(s):  
Daipayan Sarkar ◽  
Peiyuan Kang ◽  
Steven O. Nielsen ◽  
Zhenpeng Qin
Keyword(s):  
Reaction Diffusion ◽  
Large Temperature ◽  
Diffusion Kinetics ◽  
Temperature Range ◽  
Protein Inactivation

Study on characteristics of schottky temperature detector based on metal/n-ZnO/n-Si structures

2020 ◽  
Vol 12 ◽  
Author(s):  
Fang Wang ◽  
Jingkai Wei ◽  
Caixia Guo ◽  
Tao Ma ◽  
Linqing Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
Temperature Response ◽  
Large Temperature ◽  
Mems Devices ◽  
Temperature Range ◽  
Response Characteristics ◽  
High Temperature Measurement ◽  
Temperature Detector ◽  
Schottky Structure

Background: At present, the main problems of Micro-Electro-Mechanical Systems (MEMS) temperature detector focus on the narrow range of temperature detection, difficulty of the high temperature measurement. Besides, MEMS devices have different response characteristics for various surrounding temperature in the petrochemical and metallurgy application fields with high-temperature and harsh conditions. To evaluate the performance stability of the hightemperature MEMS devices, the real-time temperature measurement is necessary. Objective: A schottky temperature detector based on the metal/n-ZnO/n-Si structures is designed to measure high temperature (523~873K) for the high-temperature MEMS devices with large temperature range. Method: By using the finite element method (FEM), three different work function metals (Cu, Ni and Pt) contact with the n-ZnO are investigated to realize Schottky. At room temperature (298K) and high temperature (523~873K), the current densities with various bias voltages (J-V) are studied. Results: The simulation results show that the high temperature response power consumption of three schottky detectors of Cu, Ni and Pt decreases successively, which are 1.16 mW, 63.63 μW and 0.14 μW. The response temperature sensitivities of 6.35 μA/K, 0.78 μA/K, and 2.29 nA/K are achieved. Conclusion: The Cu/n-ZnO/n-Si schottky structure could be used as a high temperature detector (523~873K) for the hightemperature MEMS devices. It has a large temperature range (350K) and a high response sensitivity is 6.35 μA/K. Compared with traditional devices, the Cu/n-ZnO/n-Si Schottky structure based temperature detector has a low energy consumption of 1.16 mW, which has potential applications in the high-temperature measurement of the MEMS devices.

Rational direct synthesis of [Fe(Htrz)2(trz)](BF4) polymorphs: temperature and concentration effects.

2021 ◽  
Author(s):  
Marlene Palluel ◽  
Liza el Khoury ◽  
Nathalie Daro ◽  
Sonia Buffière ◽  
Michaël Josse ◽  
...  
Keyword(s):  
Memory Effect ◽  
Spin Crossover ◽  
Direct Synthesis ◽  
Large Temperature ◽  
Concentration Effects ◽  
Temperature Range ◽  
Temperature And Concentration Effects

The [Fe(Htrz)2trz](BF4) compound is probably the most studied in the spin crossover (SCO) community since it exhibits switching properties with a large temperature range of memory effect, just above room...

Synthesis and characterization of a quaternary copolymer retarder for cementing in a long sealing section with large temperature difference

2020 ◽  
Vol 44 (9) ◽  
pp. 3771-3776
Author(s):  
Zhigang Peng ◽  
Chen Chen ◽  
Qian Feng ◽  
Yong Zheng ◽  
Huan Liu ◽  
...  
Keyword(s):  
Temperature Difference ◽  
Synthesis And Characterization ◽  
Large Temperature ◽  
Temperature Range ◽  
Large Temperature Difference

We synthesized a retarder, which has excellent thickening performance in the temperature range of 90–150 °C.

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