Millimeter-Scale Growth of Single-Oriented Graphene on a Palladium Silicide Amorphous Film

ACS Nano ◽  
2019 ◽  
Author(s):  
Hyun-Woo Kim ◽  
Inkyung Song ◽  
Tae-Hoon Kim ◽  
Sung Joon Ahn ◽  
Ha-Chul Shin ◽  
...  
Author(s):  
H.-J. Kleebe ◽  
J.S. Vetrano ◽  
J. Bruley ◽  
M. Rühle

It is expected that silicon nitride based ceramics will be used as high-temperature structural components. Though much progress has been made in both processing techniques and microstructural control, the mechanical properties required have not yet been achieved. It is thought that the high-temperature mechanical properties of Si3N4 are limited largely by the secondary glassy phases present at triple points. These are due to various oxide additives used to promote liquid-phase sintering. Therefore, many attempts have been performed to crystallize these second phase glassy pockets in order to improve high temperature properties. In addition to the glassy or crystallized second phases at triple points a thin amorphous film exists at two-grain junctions. This thin film is found even in silicon nitride formed by hot isostatic pressing (HIPing) without additives. It has been proposed by Clarke that an amorphous film can exist at two-grain junctions with an equilibrium thickness.


Author(s):  
Takao Suzuki ◽  
Hossein Nuri

For future high density magneto-optical recording materials, a Bi-substituted garnet film ((BiDy)3(FeGa)5O12) is an attractive candidate since it has strong magneto-optic effect at short wavelengths less than 600 nm. The signal in read back performance at 500 nm using a garnet film can be an order of magnitude higher than a current rare earth-transition metal amorphous film. However, the granularity and surface roughness of such crystalline garnet films are the key to control for minimizing media noise.We have demonstrated a new technique to fabricate a garnet film which has much smaller grain size and smoother surfaces than those annealed in a conventional oven. This method employs a high ramp-up rate annealing (Γ = 50 ~ 100 C/s) in nitrogen atmosphere. Fig.1 shows a typical microstruture of a Bi-susbtituted garnet film deposited by r.f. sputtering and then subsequently crystallized by a rapid thermal annealing technique at Γ = 50 C/s at 650 °C for 2 min. The structure is a single phase of garnet, and a grain size is about 300A.


Author(s):  
T. Oikawa ◽  
H. Kosugi ◽  
F. Hosokawa ◽  
D. Shindo ◽  
M. Kersker

Evaluation of the resolution of the Imaging Plate (IP) has been attempted by some methods. An evaluation method for IP resolution, which is not influenced by hard X-rays at higher accelerating voltages, was proposed previously by the present authors. This method, however, requires truoblesome experimental preperations partly because specially synthesized hematite was used as a specimen, and partly because a special shape of the specimen was used as a standard image. In this paper, a convenient evaluation method which is not infuenced by the specimen shape and image direction, is newly proposed. In this method, phase contrast images of thin amorphous film are used.Several diffraction rings are obtained by the Fourier transformation of a phase contrast image of thin amorphous film, taken at a large under focus. The rings show the spatial-frequency spectrum corresponding to the phase contrast transfer function (PCTF). The envelope function is obtained by connecting the peak intensities of the rings. The evelope function is offten used for evaluation of the instrument, because the function shows the performance of the electron microscope (EM).


Author(s):  
J. L. Batstone ◽  
D.A. Smith

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.


Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2479
Author(s):  
Stefano Rossi ◽  
Luciana Volgare ◽  
Carine Perrin-Pellegrino ◽  
Carine Chassigneux ◽  
Erick Dousset ◽  
...  

Surface treatments are considered as a good alternative to increase biocompatibility and the lifetime of Ti-based alloys used for implants in the human body. The present research reports the comparison of bare and modified Ti6Al4V substrates on hydrophilicity and corrosion resistance properties in body fluid environment at 37 °C. Several surface treatments were conducted separately to obtain either a porous oxide layer using nanostructuration (N) in ethylene glycol containing fluoride solution, or bulk oxide thin films through heat treatment at 450 °C for 3 h (HT), or electrochemical oxidation at 1 V for 3 h (EO), as well as combined treatments (N-HT and N-EO). In-situ X-ray diffraction and ex-situ transmission electron microscopy have shown that heat treatment gave first rise to the formation of a 30 nm thick amorphous layer which crystallized in rutile around 620 °C. Electrochemical oxidations gave rise to a 10 nm thick amorphous film on the top of the surface (EO) or below the amorphous nanotube layer (N-EO). Dual treated samples presented similar results with a more stable behavior for N-EO. Finally, for both corrosion and hydrophilicity points of view, the new combined treatment to get a total amorphous N-EO sample seems to be the best and even better than the partially crystallized N-HT sample.


Science ◽  
2001 ◽  
Vol 294 (5545) ◽  
pp. 1243d-1243
Author(s):  
B. Purnell
Keyword(s):  

2011 ◽  
Vol 158 (5) ◽  
pp. K131 ◽  
Author(s):  
Jae Hyoung Park ◽  
Hoo Keun Park ◽  
Jinhoo Jeong ◽  
Woong Kim ◽  
Byoung Koun Min ◽  
...  

1993 ◽  
Vol 313 ◽  
Author(s):  
Eva M. Wong ◽  
Haixing Zheng ◽  
John D. Mackenzie ◽  
T. Tsuchiya

ABSTRACTFerrimagnetic oxide films have been shown to have potential for use as Magneto-optical information storage Materials. Cobalt ferrite films are particularly interesting for magneto optical information storage due to their high magneto optical rotation [1]. In this work, synthesized soluble cobalt (II) and iron (III) Methoxyethoxides were mixed in stoichiometric ratios for use as Co and Fe precursors in the preparation of CoFe2O4ferrimagnetic films. The decomposition of the precursors was characterized by thermogravimetric analysis.CoFe2O4 films were prepared by the dip coating technique using fused silica substrates. These films were then heat treated at temperatures ranging from 200°C to 600°C to study the transformation from an amorphous film to a crystalline film as determined by x-ray diffraction. The Magnetic hysteresis behavior of the films as a function of heat treating temperature and hence crystallinity was also studied. As a general trend, films having a greater degree of crystallinity exhibited larger values of saturation magnetization and remanent Magnetization. The amorphous film was found to exhibit the highest coercive field, but low values of saturation and remanent Magnetization. The effect of heat treating under the influence of a magnetic field of 1.88 kÖe was found to enhance crystallization only slightly and had very little effect on the magnetic properties of the film.


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