scholarly journals Amplified Sensitivity of Nitrogen-Vacancy Spins in Nanodiamonds Using All-Optical Charge Readout

ACS Nano ◽  
2018 ◽  
Vol 12 (5) ◽  
pp. 4678-4686 ◽  
Author(s):  
David A. Hopper ◽  
Richard R. Grote ◽  
Samuel M. Parks ◽  
Lee C. Bassett
2018 ◽  
Vol 115 (31) ◽  
pp. 7879-7883 ◽  
Author(s):  
G. Wolfowicz ◽  
S. J. Whiteley ◽  
D. D. Awschalom

Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high-frequency (megahertz to gigahertz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high-frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of 41±8(V/cm)2/Hz. Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.


2014 ◽  
Vol 16 (8) ◽  
pp. 083033 ◽  
Author(s):  
Zhen-Yu Wang ◽  
Jian-Ming Cai ◽  
Alex Retzker ◽  
Martin B Plenio

2019 ◽  
Vol 123 (24) ◽  
pp. 15366-15374 ◽  
Author(s):  
Yuen Yung Hui ◽  
Oliver Y. Chen ◽  
Terumitsu Azuma ◽  
Be-Ming Chang ◽  
Feng-Jen Hsieh ◽  
...  

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
K.L. Litvinenko ◽  
E.T. Bowyer ◽  
P.T. Greenland ◽  
N. Stavrias ◽  
Juerong Li ◽  
...  

Abstract The ability to control dynamics of quantum states by optical interference, and subsequent electrical read-out, is crucial for solid state quantum technologies. Ramsey interference has been successfully observed for spins in silicon and nitrogen vacancy centres in diamond, and for orbital motion in InAs quantum dots. Here we demonstrate terahertz optical excitation, manipulation and destruction via Ramsey interference of orbital wavepackets in Si:P with electrical read-out. We show milliradian control over the wavefunction phase for the two-level system formed by the 1s and 2p states. The results have been verified by all-optical echo detection methods, sensitive only to coherent excitations in the sample. The experiments open a route to exploitation of donors in silicon for atom trap physics, with concomitant potential for quantum computing schemes, which rely on orbital superpositions to, for example, gate the magnetic exchange interactions between impurities.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Dominik M. Irber ◽  
Francesco Poggiali ◽  
Fei Kong ◽  
Michael Kieschnick ◽  
Tobias Lühmann ◽  
...  

AbstractHigh-fidelity projective readout of a qubit’s state in a single experimental repetition is a prerequisite for various quantum protocols of sensing and computing. Achieving single-shot readout is challenging for solid-state qubits. For Nitrogen-Vacancy (NV) centers in diamond, it has been realized using nuclear memories or resonant excitation at cryogenic temperature. All of these existing approaches have stringent experimental demands. In particular, they require a high efficiency of photon collection, such as immersion optics or all-diamond micro-optics. For some of the most relevant applications, such as shallow implanted NV centers in a cryogenic environment, these tools are unavailable. Here we demonstrate an all-optical spin readout scheme that achieves single-shot fidelity even if photon collection is poor (delivering less than 103 clicks/second). The scheme is based on spin-dependent resonant excitation at cryogenic temperature combined with spin-to-charge conversion, mapping the fragile electron spin states to the stable charge states. We prove this technique to work on shallow implanted NV centers, as they are required for sensing and scalable NV-based quantum registers.


2019 ◽  
Vol 12 (1) ◽  
Author(s):  
M. Fukami ◽  
C.G. Yale ◽  
P. Andrich ◽  
X. Liu ◽  
F.J. Heremans ◽  
...  

2016 ◽  
Vol 6 (6) ◽  
Author(s):  
David A. Broadway ◽  
James D. A. Wood ◽  
Liam T. Hall ◽  
Alastair Stacey ◽  
Matthew Markham ◽  
...  

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