scholarly journals Hole Transport in Exfoliated Monolayer MoS2

ACS Nano ◽  
2018 ◽  
Vol 12 (3) ◽  
pp. 2669-2676 ◽  
Author(s):  
Evgeniy Ponomarev ◽  
Árpád Pásztor ◽  
Adrien Waelchli ◽  
Alessandro Scarfato ◽  
Nicolas Ubrig ◽  
...  
Keyword(s):  
Hole Transport ◽  
Monolayer Mos2

Evolution of local strain in Ag-deposited monolayer MoS2 modulated by interface interactions

Nanoscale ◽  
2019 ◽  
Vol 11 (46) ◽  
pp. 22432-22439 ◽  
Author(s):  
Yinghui Sun ◽  
Yan Aung Moe ◽  
Yingying Xu ◽  
Yufei Sun ◽  
Xuewen Wang ◽  
...  
Keyword(s):  
Local Strain ◽  
Monolayer Mos2 ◽  
Interface Interaction

Local strain is best preserved on Al2O3 but relaxed most easily on mica because of the interface interaction from substrates.

Measurement and Modeling of Hole Transport in Blends of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) and the Hole-conducting Material HIM

2008 ◽  
Author(s):  
Christoph Zimmermann ◽  
Manuel Bösing ◽  
Florian Lindla ◽  
Alaa Abdellah ◽  
Frank Jessen ◽  
...  
Keyword(s):  
Hole Transport ◽  
Conducting Material

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

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