Thermally Strained Band Gap Engineering of Transition-Metal Dichalcogenide Bilayers with Enhanced Light–Matter Interaction toward Excellent Photodetectors

ACS Nano ◽  
2017 ◽  
Vol 11 (9) ◽  
pp. 8768-8776 ◽  
Author(s):  
Sheng-Wen Wang ◽  
Henry Medina ◽  
Kuo-Bin Hong ◽  
Chun-Chia Wu ◽  
Yindong Qu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenide ◽  
Band Gap Engineering ◽  
Matter Interaction ◽  
Light Matter Interaction

Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications

Nanoscale ◽  
2015 ◽  
Vol 7 (44) ◽  
pp. 18392-18401 ◽  
Author(s):  
L. M. Xie
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Broad Band ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Band Gap Engineering ◽  
Two Dimensional Materials

Alloying allows broad band gap engineering and more for two-dimensional materials.

Phase‐Dependent Band Gap Engineering in Alloys of Metal‐Semiconductor Transition Metal Dichalcogenides

2020 ◽  
Vol 30 (51) ◽  
pp. 2004912
Author(s):  
Shuxi Wang ◽  
John Cavin ◽  
Zahra Hemmat ◽  
Khagesh Kumar ◽  
Alexander Ruckel ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
Band Gap Engineering ◽  
Metal Dichalcogenides

Band gap modulation of transition-metal dichalcogenide MX 2 nanosheets by in-plane strain

2016 ◽  
Vol 84 ◽  
pp. 216-222 ◽  
Author(s):  
Xiangying Su ◽  
Weiwei Ju ◽  
Ruizhi Zhang ◽  
Chongfeng Guo ◽  
Yongliang Yong ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Plane Strain ◽  
Transition Metal Dichalcogenide ◽  
Band Gap Modulation

scholarly journals Light–matter interaction in transition metal dichalcogenides and their heterostructures

2017 ◽  
Vol 50 (17) ◽  
pp. 173001 ◽  
Author(s):  
Ursula Wurstbauer ◽  
Bastian Miller ◽  
Eric Parzinger ◽  
Alexander W Holleitner
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Matter Interaction ◽  
Metal Dichalcogenides ◽  
Light Matter Interaction

scholarly journals Controllable Synthesis of Band-Gap-Tunable and Monolayer Transition-Metal Dichalcogenide Alloys

2014 ◽  
Vol 2 ◽  
Author(s):  
Sheng-Han Su ◽  
Wei-Ting Hsu ◽  
Chang-Lung Hsu ◽  
Chang-Hsiao Chen ◽  
Ming-Hui Chiu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenide ◽  
Controllable Synthesis

Band gap engineering of transition metal (Ni/Co) codoped in zinc oxide (ZnO) nanoparticles

2018 ◽  
Vol 744 ◽  
pp. 90-95 ◽  
Author(s):  
Rai Nauman Ali ◽  
Hina Naz ◽  
Jing Li ◽  
Xingqun Zhu ◽  
Ping Liu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Transition Metal ◽  
Band Gap ◽  
Zno Nanoparticles ◽  
Band Gap Engineering

Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys

ACS Nano ◽  
2013 ◽  
Vol 7 (5) ◽  
pp. 4610-4616 ◽  
Author(s):  
Yanfeng Chen ◽  
Jinyang Xi ◽  
Dumitru O. Dumcenco ◽  
Zheng Liu ◽  
Kazu Suenaga ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenide ◽  
Tunable Band Gap

scholarly journals Tunable Electronic Properties of Lateral Monolayer Transition Metal Dichalcogenide Superlattice Nanoribbons

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 534
Author(s):  
Jinhua Wang ◽  
Gyaneshwar P. Srivastava
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Electronic Properties ◽  
Density Functional ◽  
Valence Band Maximum ◽  
Impurity Level ◽  
Asymmetric Structure ◽  
Transition Metal Dichalcogenide ◽  
Structural And Electronic Properties ◽  
Gap States

The structural stability and structural and electronic properties of lateral monolayer transition metal chalcogenide superlattice zigzag and armchair nanoribbons have been studied by employing a first-principles method based on the density functional theory. The main focus is to study the effects of varying the width and periodicity of nanoribbon, varying cationic and anionic elements of superlattice parent compounds, biaxial strain, and nanoribbon edge passivation with different elements. The band gap opens up when the (MoS2)3/(WS2)3 and (MoS2)3/(MoTe2)3 armchair nanoribbons are passivated by H, S and O atoms. The H and O co-passivated (MoS2)3/(WS2)3 armchair nanoribbon exhibits higher energy band gap. The band gap with the edge S vacancy connecting to the W atom is much smaller than the S vacancy connecting to the Mo atom. Small band gaps are obtained for both edge and inside Mo vacancies. There is a clear difference in the band gap states between inside and edge Mo vacancies for symmetric nanoribbon structure, while there is only a slight difference for asymmetric structure. The electronic orbitals of atoms around Mo vacancy play an important role in determining the valence band maximum, conduction band minimum, and impurity level in the band gap.

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