Metal-Substrate-Mediated Plasmon Hybridization in a Nanoparticle Dimer for Photoluminescence Line-Width Shrinking and Intensity Enhancement

ACS Nano ◽  
2017 ◽  
Vol 11 (3) ◽  
pp. 3067-3080 ◽  
Author(s):  
Guang-Can Li ◽  
Yong-Liang Zhang ◽  
Jing Jiang ◽  
Yu Luo ◽  
Dang Yuan Lei
Keyword(s):  
Line Width ◽  
Metal Substrate ◽  
Plasmon Hybridization ◽  
Intensity Enhancement ◽  
Photoluminescence Line

Narrow Photoluminescence Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures

1997 ◽  
Vol 36 (Part 2, No. 2A) ◽  
pp. L158-L161 ◽  
Author(s):  
Yoshihiro Sugiyama ◽  
Yoshiaki Nakata ◽  
Toshiro Futatsugi ◽  
Mitsuru Sugawara ◽  
Yuji Awano ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Line Width ◽  
Photoluminescence Line ◽  
Self Assembled

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

2011 ◽  
Vol 45 (2) ◽  
pp. 198-202 ◽  
Author(s):  
M. V. Shaleev ◽  
A. V. Novikov ◽  
N. A. Baydakova ◽  
A. N. Yablonskiy ◽  
O. A. Kuznetsov ◽  
...  
Keyword(s):  
Line Width ◽  
Strained Si ◽  
Photoluminescence Line ◽  
Self Assembled

On The Radii of Ap Stars

1976 ◽  
Vol 32 ◽  
pp. 49-55 ◽  
Author(s):  
F.A. Catalano ◽  
G. Strazzulla
Keyword(s):  
Observational Data ◽  
Line Width ◽  
Main Sequence ◽  
Main Sequence Stars ◽  
Ap Stars

SummaryFrom the analysis of the observational data of about 100 Ap stars, the radii have been computed under the assumption that Ap are main sequence stars. Radii range from 1.4 to 4.9 solar units. These values are all compatible with the Deutsch's period versus line-width relation.

Existence of Cubic ZrO2 at 300°C on Bulk Zirconium

1969 ◽  
Vol 27 ◽  
pp. 166-167
Author(s):  
R.A. Ploc
Keyword(s):  
Metal Oxide ◽  
Metal Substrate ◽  
Preferred Orientation ◽  
Monoclinic Zirconia ◽  
Epitaxial Relationship

The manner in which ZrO2 forms on zirconium at 300°C in air has been discussed in the first reference. In short, monoclinic zirconia nucleates and grows with a preferred orientation relative to the metal substrate. The mode of growth is not well understood since an epitaxial relationship which gives minimum misfit between the zirconium ions in the metal/oxide combination is not realized. The reason may be associated with a thin cubic or tetragonal layer of ZrO2 between the inner oxygen saturated metal and the outer monoclinic zirconia.

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

SIZE DEPENDENT FMR LINE-SHIFT AND LINE-WIDTH STUDIES IN POLYCRYSTALLINE FERRITES AND GARNETS

1977 ◽  
Vol 38 (C1) ◽  
pp. C1-267-C1-269 ◽  
Author(s):  
C. M. SRIVASTAVA ◽  
M. J. PATNI ◽  
N. G. NANADIKAR
Keyword(s):  
Line Width ◽  
Line Shift ◽  
Size Dependent

Reliability Evaluation for a Wet-Plated Electrode with a Al/Al2O3/Cu Insulated Metal Substrate

2013 ◽  
Vol 51 (7) ◽  
pp. 523-527 ◽  
Author(s):  
Su-Jeong Suh ◽  
Chang-Hyoung Lee ◽  
Young-Lae Cho ◽  
Hwa-Sun Park ◽  
Won-Pyo Lee ◽  
...  
Keyword(s):  
Reliability Evaluation ◽  
Metal Substrate

Performance and Reliability of a MEMS-based tunable optical filter operating in the 1565 nm-1525 nm wavelength range

2002 ◽  
Vol 722 ◽  
Author(s):  
T. S. Sriram ◽  
B. Strauss ◽  
S. Pappas ◽  
A. Baliga ◽  
A. Jean ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Line Width ◽  
Insertion Loss ◽  
Optical Filter ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Reliability Testing ◽  
Silicon Nitride Membrane ◽  
Tunable Optical Filter ◽  
Extensive Performance

AbstractThis paper describes the results of extensive performance and reliability characterization of a silicon-based surface micro-machined tunable optical filter. The device comprises a high-finesse Fabry-Perot etalon with one flat and one curved dielectric mirror. The curved mirror is mounted on an electrostatically actuated silicon nitride membrane tethered to the substrate using silicon nitride posts. A voltage applied to the membrane allows the device to be tuned by adjusting the length of the cavity. The device is coupled optically to an input and an output single mode fiber inside a hermetic package. Extensive performance characterization (over operating temperature range) was performed on the packaged device. Parameters characterized included tuning characteristics, insertion loss, filter line-width and side mode suppression ratio. Reliability testing was performed by subjecting the MEMS structure to a very large number of actuations at an elevated temperature both inside the package and on a test board. The MEMS structure was found to be extremely robust, running trillions of actuations without failures. Package level reliability testing conforming to Telcordia standards indicated that key device parameters including insertion loss, filter line-width and tuning characteristics did not change measurably over the duration of the test.

Dual Damascene Process for FatWires in Copper/FSG Technology

2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  
Keyword(s):  
Line Width ◽  
Lower Cost ◽  
Process Window ◽  
Cmos Process ◽  
Dual Damascene ◽  
Damascene Process ◽  
Interconnect Technology

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.

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