Fully Screen-Printed, Large-Area, and Flexible Active-Matrix Electrochromic Displays Using Carbon Nanotube Thin-Film Transistors

ACS Nano ◽  
2016 ◽  
Vol 10 (11) ◽  
pp. 9816-9822 ◽  
Author(s):  
Xuan Cao ◽  
Christian Lau ◽  
Yihang Liu ◽  
Fanqi Wu ◽  
Hui Gui ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Large Area ◽  
Active Matrix ◽  
Screen Printed

Large-area and highly uniform carbon nanotube film for high-performance thin film transistors

Nano Research ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 4356-4367 ◽  
Author(s):  
Guodong Dong ◽  
Jie Zhao ◽  
Lijun Shen ◽  
Jiye Xia ◽  
Hu Meng ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
High Performance ◽  
Large Area ◽  
Carbon Nanotube Film ◽  
Highly Uniform

Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 455-459 ◽  
Author(s):  
Sangyun Lee ◽  
Bonwon Koo ◽  
Jae-Geun Park ◽  
Hyunsik Moon ◽  
Jungseok Hahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
High Performance ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Processing Temperature ◽  
Organic Thin Film ◽  
Large Area ◽  
Active Matrix

AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.

scholarly journals Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics

2020 ◽  
Vol 9 (5) ◽  
pp. 270-273
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Simulation Software ◽  
Active Components ◽  
Large Area ◽  
Silicon Thin Film ◽  
Flexible Display ◽  
Active Matrix

The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn't readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.

scholarly journals High field breakdown characteristics of carbon nanotube thin film transistors

2013 ◽  
Vol 24 (40) ◽  
pp. 405204 ◽  
Author(s):  
Man Prakash Gupta ◽  
Ashkan Behnam ◽  
Feifei Lian ◽  
David Estrada ◽  
Eric Pop ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
High Field
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