scholarly journals Chemical Vapor Deposition Growth of Monolayer WSe2with Tunable Device Characteristics and Growth Mechanism Study

ACS Nano ◽  
2015 ◽  
Vol 9 (6) ◽  
pp. 6119-6127 ◽  
Author(s):  
Bilu Liu ◽  
Mohammad Fathi ◽  
Liang Chen ◽  
Ahmad Abbas ◽  
Yuqiang Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mechanism Study ◽  
Chemical Vapor Deposition Growth ◽  
Tunable Device

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

NANO ◽  
2018 ◽  
Vol 13 (08) ◽  
pp. 1850088 ◽  
Author(s):  
Yang Wang ◽  
Yu Cheng ◽  
Yunlu Wang ◽  
Shuai Zhang ◽  
Chen Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Domain Boundaries ◽  
Cvd Growth ◽  
Graphene Domain

Many aspects in the chemical vapor deposition (CVD) growth of graphene remain unclear such as its behavior near the catalyst grain boundaries. Here we investigate the CVD growth mechanism of graphene across the Cu grain boundaries using unidirectional aligned graphene domains, which simplifies the analysis of both graphene and Cu to a large extent. We found that for a graphene domain grown across the Cu grain boundary, the domain orientation is determined by the Cu grain where the domain nucleation center is located, and the Cu grain boundary will not change the growth behavior for this graphene domain. This growth mechanism is consistent with the Cu-step-attached nucleation and edge-attachment-limited growth mechanism for H-terminated graphene domains and will provide more guidance for the synthesis of high-quality graphene with less domain boundaries.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3
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