scholarly journals Atomic-Scale Tuning of the Charge Distribution by Strain Engineering in Oxide Heterostructures

ACS Nano ◽  
2021 ◽  
Author(s):  
Yu-Mi Wu ◽  
Y. Eren Suyolcu ◽  
Gideok Kim ◽  
Georg Christiani ◽  
Yi Wang ◽  
...  
Keyword(s):  
Charge Distribution ◽  
Strain Engineering ◽  
Atomic Scale ◽  
Oxide Heterostructures

scholarly journals Intra- and intermolecular atomic-scale interactions in the receptor binding domain of SARS-CoV-2 spike protein: implication for ACE2 receptor binding

2020 ◽  
Vol 22 (33) ◽  
pp. 18272-18283 ◽  
Author(s):  
Puja Adhikari ◽  
Neng Li ◽  
Matthew Shin ◽  
Nicole F. Steinmetz ◽  
Reidun Twarock ◽  
...  
Keyword(s):  
Charge Distribution ◽  
Receptor Binding ◽  
Binding Domain ◽  
Atomic Scale ◽  
Spike Protein ◽  
Partial Charge ◽  
Receptor Binding Domain ◽  
Structural Domains ◽  
Scale Interactions

Five structural domains in chain A and partial charge distribution in RBD with same orientation as of chain A.

scholarly journals Strain Engineering of Epitaxial Oxide Heterostructures Beyond Substrate Limitations

2019 ◽  
Author(s):  
Xiong Deng ◽  
Chao Chen ◽  
Deyang Chen ◽  
Xiangbin Cai ◽  
Chao Xu ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Oxide Heterostructures ◽  
Epitaxial Oxide

scholarly journals Atomic-scale structure relaxation, chemistry and charge distribution of dislocation cores in SrTiO3

2018 ◽  
Vol 184 ◽  
pp. 217-224 ◽  
Author(s):  
Peng Gao ◽  
Ryo Ishikawa ◽  
Bin Feng ◽  
Akihito Kumamoto ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Charge Distribution ◽  
Scale Structure ◽  
Atomic Scale ◽  
Structure Relaxation ◽  
Atomic Scale Structure

Strain regulated interlayer coupling in WSe2/WS2 heterobilayer

2021 ◽  
Author(s):  
Xiaodan Xu ◽  
Cong Wang ◽  
Wenqi Xiong ◽  
Yang Liu ◽  
Donghao Yang ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Electronic Band Structure ◽  
2D Materials ◽  
Interlayer Coupling ◽  
Strain Engineering ◽  
Atomic Scale ◽  
Nanometer Scale ◽  
Photoluminescence Intensity ◽  
Practical Application ◽  
Electronic Band

Abstract Strain engineering can effectively modify the materials lattice parameters at atomic scale, hence it has become an efficient method for tuning the physical properties of two-dimensional (2D) materials. The study of the strain regulated interlayer coupling is deserved for different kinds of heterostructures. Here, we systematically studied the strain engineering of WSe2/WS2 heterostructures as well as their constituent monolayers. The measured Raman and photoluminescence spectra demonstrate that the strain can evidently modulate the phonon energy and exciton emission of monolayer WSe2 and WS2 as well as the WSe2/WS2 heterostructures. The tensile strain can tune the electronic band structure of WSe2/WS2 heterostructure, as well as enhance the interlayer coupling. It is further revealed that the photoluminescence intensity ratio of WS2 to WSe2 in our WSe2/WS2 heterobilayer increases monotonically with tensile strain. These findings can broaden the understanding and practical application of strain engineering in 2D materials with nanometer-scale resolution.

scholarly journals Strain engineering of epitaxial oxide heterostructures beyond substrate limitations

Matter ◽  
2021 ◽  
Vol 4 (4) ◽  
pp. 1323-1334 ◽  
Author(s):  
Xiong Deng ◽  
Chao Chen ◽  
Deyang Chen ◽  
Xiangbin Cai ◽  
Xiaozhe Yin ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Oxide Heterostructures ◽  
Epitaxial Oxide

scholarly journals Atomic scale understanding of the electronic structure of 5d-3d perovskite oxide heterostructures using STEM-EELS.

2021 ◽  
Vol 27 (S1) ◽  
pp. 356-358
Author(s):  
Sandhya Susarla ◽  
Xiaoxi Huang ◽  
Shehrin Sayed ◽  
Lucas Caretta ◽  
Hongrui Zhang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Atomic Scale ◽  
Perovskite Oxide ◽  
Oxide Heterostructures

scholarly journals Interfacial Shear at the Atomic Scale

2021 ◽  
Author(s):  
Martin Rejhon ◽  
Francesco Lavini ◽  
Ali Khosravi ◽  
Mykhailo Shestopalov ◽  
Jan Kunc ◽  
...  
Keyword(s):  
Shear Modulus ◽  
Sliding Friction ◽  
Chemical Properties ◽  
Shear Stiffness ◽  
Atomic Layer ◽  
Strain Engineering ◽  
Interfacial Shear ◽  
Atomic Scale ◽  
Interfacial Property ◽  
Bilayer Films

Abstract Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological level. From Fermi level pinning to strain engineering and superlubricity, the interaction between a single atomic layer and its substrate governs electronic, mechanical, and chemical properties of the layer-substrate system. Here, we measure the hardly accessible interfacial transverse shear modulus of an atomic layer on a substrate. We show that this key interfacial property is critically controlled by the chemistry, order, and structure of the atomic layer-substrate interface. In particular, the experiments demonstrate that the interfacial shear modulus of epitaxial graphene on SiC increases for bilayer films compared to monolayer films, and augments when hydrogen is intercalated between graphene and SiC. The increase in shear modulus for two layers compared to one layer is explained in terms of layer-layer and layer-substrate stacking order, whereas the increase with H-intercalation is correlated with the pinning induced by the H-atoms at the interface. Importantly, we also demonstrate that this modulus is a pivotal measurable property to control and predict sliding friction in supported two-dimensional materials. Indeed, we observe an inverse relationship between friction and interfacial shear modulus, which naturally emerges from simple friction models based on a point mass driven over a periodic potential. This inverse relation originates from a decreased dissipation in presence of large shear stiffness, which reduces the energy barrier for sliding.

scholarly journals Large-scale Domain Engineering in Two-Dimensional Ferroelectric CuInP2S6 via Giant Flexoelectric Effect

2021 ◽  
Author(s):  
Chen Chen ◽  
Heng Liu ◽  
Qinglin Lai ◽  
Xiaoyu Mao ◽  
Jun Fu ◽  
...  
Keyword(s):  
Large Scale ◽  
Mechanical Strain ◽  
Hysteresis Loops ◽  
Strain Engineering ◽  
Domain Engineering ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Stripe Domain ◽  
Flexoelectric Effect ◽  
Two Dimensional Materials

Abstract Room-temperature ferroelectricity in two-dimensional materials offer a potential route for developing atomic-scale functional devices beyond Moore’s law. However, as a key for the technology implementations of ferroelectrics in electronics, the controllable generation of uniform domains remains challenging in two-dimensional ferroelectrics at current stage because domain engineering through an external electric field at 2D limit inevitably leads to large leakage current and material break-down. Here, we demonstrate a voltage-free method, the flexoelectric effect, to artificially generate large-scale stripe domains in two-dimensional ferroelectric CuInP2S6 with single domain lateral size at the scale of several hundred microns. With giant strain gradients (~106 m−1) at nanoscale, we mechanically switch the out-of-plane polarization in ultrathin CuInP2S6. The flexoelectric control of ferroelectric polarization is understood with a distorted Landau-Ginzburg-Devonshire double well model as evidenced by the shifted ferroelectric hysteresis loops and the first-principle calculations. Through substrate mechanical strain engineering, the stripe domain density is controllable. Our results not only highlight the potential of developing van der Waals ferroelectrics-based memories but also offer the opportunity to study ferroelectric domain physics in two-dimensional materials.

scholarly journals Tunable Magnetic Interaction at the Atomic Scale in Oxide Heterostructures

2010 ◽  
Vol 105 (16) ◽  
Author(s):  
J. W. Seo ◽  
W. Prellier ◽  
P. Padhan ◽  
P. Boullay ◽  
J.-Y. Kim ◽  
...  
Keyword(s):  
Magnetic Interaction ◽  
Atomic Scale ◽  
Oxide Heterostructures ◽  
Tunable Magnetic Interaction
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