Upconversion Photovoltaic Effect of WS2/2D Perovskite Heterostructures by Two-Photon Absorption

ACS Nano ◽  
2021 ◽  
Author(s):  
Qixing Wang ◽  
Andrew T. S. Wee
Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1195
Author(s):  
Jonas Gradauskas ◽  
Bohdan Dzundza ◽  
Leonid Chernyak ◽  
Zinovy Dashevsky

A lead telluride sensor was fabricated on the base of a p-n PbTe junction created on a PbTe single crystal grown by the Czochralski technique, followed by the diffusion of an indium donor impurity into a crystal. The capacitance-voltage and current-voltage characteristics of the sensor were measured over the temperature range from 80 K to 150 K. A prototype of a high-temperature mid-IR sensor, a PbTe diode, with a cut-off wavelength of 4 μm, operating at temperatures up to 150 K, was demonstrated for the first time. The advantage of the sensor is that its operating temperature is high enough to be reached by a solid-state thermoelectric cooler. The sensor showed a specific detectivity value of 1010 cm Hz1/2/W at a temperature of 150 K and a wavelength of 4.2 μm. The possibility to sense pulses of long-IR radiation by means of the PbTe diode was also demonstrated over the 100–180 K temperature range. For the first time, a two-photon absorption-caused photovoltaic effect was observed in PbTe at a wavelength of 9.5 μm at 150 K.


1996 ◽  
Vol 43 (9) ◽  
pp. 1765-1771 ◽  
Author(s):  
M. W. HAMILTON and D. S. ELLIOTT

2010 ◽  
Vol 25 (3) ◽  
pp. 289-292 ◽  
Author(s):  
Fei-Fei CHEN ◽  
Tie-Feng XU ◽  
Shi-Xun DAI ◽  
Qiu-Hua NIE ◽  
Xiang SHEN ◽  
...  

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