Large-Area Ti3C2Tx-MXene Coating: Toward Industrial-Scale Fabrication and Molecular Separation

ACS Nano ◽  
2021 ◽  
Author(s):  
Ji Hoon Kim ◽  
Gyeong Seok Park ◽  
Yong-Jae Kim ◽  
Eunji Choi ◽  
Junhyeok Kang ◽  
...  
Keyword(s):  
Industrial Scale ◽  
Large Area ◽  
Molecular Separation

scholarly journals Novel GIMS technique for deposition of colored Ti/TiO₂ coatings on industrial scale

2016 ◽  
Vol 34 (1) ◽  
pp. 137-141 ◽  
Author(s):  
Krzysztof Zdunek ◽  
Lukasz Skowroński ◽  
Rafal Chodun ◽  
Katarzyna Nowakowska-Langier ◽  
Andrzej Grabowski ◽  
...  
Keyword(s):  
Gas Injection ◽  
Deposition Process ◽  
Point Of View ◽  
Industrial Scale ◽  
Scale Production ◽  
Industrial Facility ◽  
Large Area ◽  
Glass Substrates ◽  
Process Measurements ◽  
20 Nm

AbstractThe aim of the present paper has been to verify the effectiveness and usefulness of a novel deposition process named GIMS (Gas Injection Magnetron Sputtering) used for the flrst time for deposition of Ti/TiO₂ coatings on large area glass Substrates covered in the condition of industrial scale production. The Ti/TiO₂ coatings were deposited in an industrial System utilizing a set of linear magnetrons with the length of 2400 mm each for covering the 2000 × 3000 mm glasses. Taking into account the speciflc course of the GIMS (multipoint gas injection along the magnetron length) and the scale of the industrial facility, the optical coating uniformity was the most important goal to check. The experiments on Ti/TiO₂ coatings deposited by the use of GIMS were conducted on Substrates in the form of glass plates located at the key points along the magnetrons and intentionally non-heated during any stage of the process. Measurements of the coatings properties showed that the thickness and optical uniformity of the 150 nm thick coatings deposited by GIMS in the industrial facility (the thickness differences on the large plates with 2000 mm width did not exceed 20 nm) is fully acceptable form the point of view of expected applications e.g. for architectural glazing.

Large Area Self‐Assembled Ultrathin Polyimine Nanofilms Formed at the Liquid–Liquid Interface Used for Molecular Separation

2020 ◽  
Vol 32 (8) ◽  
pp. 1905621 ◽  
Author(s):  
Karishma Tiwari ◽  
Pulak Sarkar ◽  
Solagna Modak ◽  
Harwinder Singh ◽  
Sumit Kumar Pramanik ◽  
...  
Keyword(s):  
Liquid Interface ◽  
Large Area ◽  
Molecular Separation ◽  
Self Assembled

Industrial-Scale Production of High-Quality Graphene Sheets by Millstone Grinders

2021 ◽  
Author(s):  
Peng Lv ◽  
Xiaoshi Li ◽  
Zihan Zhang ◽  
Biao Nie ◽  
Yiliang Wu ◽  
...  
Keyword(s):  
Large Scale ◽  
State Of The Art ◽  
The State ◽  
Industrial Scale ◽  
Graphene Sheets ◽  
Scale Production ◽  
Large Area ◽  
High Quality ◽  
Art Methods ◽  
Mechanical Cleavage

Abstract Graphene exhibits a variety of unprecedented innate properties and has sparked great interest in both fundamental science and regarding prospective commercial applications. To meet the ever-increasing demand for high-quality graphene sheets, an industrial-scale, reliable, environmental-friendly, low-cost production process is required. However, large-scale production high quality graphene remains elusive. Here we demonstrate a scalable mechanical cleavage method for large-quantity production of high quality large-area and few-layer graphene sheets by introducing a millstone grinding process. The average thickness of the graphene sheets is around 5 nm. This procedure is simpler than the state-of-the-art methods that allows for scalable preparation of graphene dispersion in hundreds of litres by mechanical cleavage of graphite, and the yield is 30-40%. The size of the prepared graphene sheets can be tuneable from few micrometres to tens of micrometres by varying the dimension of raw graphite, which is larger than that produced by the state-of-the-art methods. Moreover, comparing to conductive agents, the conductivity of wafers containing graphene can be increased by one order of magnitude, suggesting a high potential of the prepared graphene sheets for the application as conductive agent in lithium battery cathodes. This allows the requirements of different sizes graphene sheets for industry applications in different fields.

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

P20 phosphor on polyimide as a large area high-resolution transmission screen for slow scan CCD systems

1995 ◽  
Vol 53 ◽  
pp. 20-21
Author(s):  
C. C. Ahn ◽  
S. Karnes ◽  
M. Lvovsky ◽  
C. M. Garland ◽  
H. A. Atwater ◽  
...  
Keyword(s):  
Mechanical Stability ◽  
High Energy ◽  
Practical Implementation ◽  
Line Pair ◽  
Modulation Transfer ◽  
Large Area ◽  
Ccd Imaging ◽  
Transmission Electron ◽  
The One ◽  
Beam Broadening

The bane of CCD imaging systems for transmission electron microscopy at intermediate and high voltages has been their relatively poor modulation transfer function (MTF), or line pair resolution. The problem originates primarily with the phosphor screen. On the one hand, screens should be thick so that as many incident electrons as possible are converted to photons, yielding a high detective quantum efficiency(DQE). The MTF diminishes as a function of scintillator thickness however, and to some extent as a function of fluorescence within the scintillator substrates. Fan has noted that the use of a thin layer of phosphor beneath a self supporting 2μ, thick Al substrate might provide the most appropriate compromise for high DQE and MTF in transmission electron microcscopes which operate at higher voltages. Monte Carlo simulations of high energy electron trajectories reveal that only little beam broadening occurs within this thickness of Al film. Consequently, the MTF is limited predominantly by broadening within the thin phosphor underlayer. There are difficulties however, in the practical implementation of this design, associated mostly with the mechanical stability of the Al support film.

Study of Tip-Surface Interactions in Scanning Tunneling Microscopy (STM) by Reflection Electron Microscopy (REM)

1990 ◽  
Vol 48 (1) ◽  
pp. 320-321
Author(s):  
W. Lo ◽  
J.C.H. Spence ◽  
M. Kuwabara
Keyword(s):  
High Resolution ◽  
Elastic Strain ◽  
Tunneling Current ◽  
Surface Damage ◽  
Surface Interactions ◽  
Graphite Surface ◽  
Scanning Tunneling ◽  
Large Area ◽  
Tunneling Microscopy ◽  
High Resolution Tem

Work on the integration of STM with REM has demonstrated the usefulness of this combination. The STM has been designed to replace the side entry holder of a commercial Philips 400T TEM. It allows simultaneous REM imaging of the tip/sample region of the STM (see fig. 1). The REM technique offers nigh sensitivity to strain (<10−4) through diffraction contrast and high resolution (<lnm) along the unforeshortened direction. It is an ideal technique to use for studying tip/surface interactions in STM.The elastic strain associated with tunnelling was first imaged on cleaved, highly doped (S doped, 5 × 1018cm-3) InP(110). The tip and surface damage observed provided strong evidence that the strain was caused by tip/surface contact, most likely through an insulating adsorbate layer. This is consistent with the picture that tunnelling in air, liquid or ordinary vacuum (such as in a TEM) occurs through a layer of contamination. The tip, under servo control, must compress the insulating contamination layer in order to get close enough to the sample to tunnel. The contaminant thereby transmits the stress to the sample. Elastic strain while tunnelling from graphite has been detected by others, but never directly imaged before. Recent results using the STM/REM combination has yielded the first direct evidence of strain while tunnelling from graphite. Figure 2 shows a graphite surface elastically strained by the STM tip while tunnelling (It=3nA, Vtip=−20mV). Video images of other graphite surfaces show a reversible strain feature following the tip as it is scanned. The elastic strain field is sometimes seen to extend hundreds of nanometers from the tip. Also commonly observed while tunnelling from graphite is an increase in the RHEED intensity of the scanned region (see fig.3). Debris is seen on the tip and along the left edges of the brightened scan region of figure 4, suggesting that tip abrasion of the surface has occurred. High resolution TEM images of other tips show what appear to be attached graphite flakes. The removal of contamination, possibly along with the top few layers of graphite, seems a likely explanation for the observed increase in RHEED reflectivity. These results are not inconsistent with the “sliding planes” model of tunnelling on graphite“. Here, it was proposed that the force due to the tunnelling probe acts over a large area, causing shear of the graphite planes when the tip is scanned. The tunneling current is then modulated as the planes of graphite slide in and out of registry. The possiblity of true vacuum tunnelling from the cleaned graphite surface has not been ruled out. STM work function measurements are needed to test this.

Illumination from Large Area Light Sources—II

1914 ◽  
Vol 77 (1988supp) ◽  
pp. 82-83
Author(s):  
Herbert E. Ives
Keyword(s):  
Light Sources ◽  
Large Area
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