Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices

ACS Nano ◽  
2021 ◽  
Author(s):  
Hao Ou ◽  
Hirofumi Matsuoka ◽  
Juliette Tempia ◽  
Tomoyuki Yamada ◽  
Togo Takahashi ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Spatial Control ◽  
Light Emitting ◽  
Light Emitting Devices

Large-Area Organic–Transition Metal Dichalcogenide Hybrid Light-Emitting Device

ACS Photonics ◽  
2021 ◽  
Author(s):  
Jongchan Kim ◽  
Siwei Zhang ◽  
Shaocong Hou ◽  
Byungjun Lee ◽  
Guodan Wei ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Large Area ◽  
Light Emitting ◽  
Organic Transition

scholarly journals Light-Emitting Transition Metal Dichalcogenide Monolayers under Cellular Digestion

2018 ◽  
Vol 30 (8) ◽  
pp. 1703321 ◽  
Author(s):  
Yin-Ting Yeh ◽  
Yi Tang ◽  
Zhong Lin ◽  
Kazunori Fujisawa ◽  
Yu Lei ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Light Emitting

scholarly journals Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Cyrine Ernandes ◽  
Lama Khalil ◽  
Hela Almabrouk ◽  
Debora Pierucci ◽  
Biyuan Zheng ◽  
...  
Keyword(s):  
Band Gap ◽  
Structure Evolution ◽  
Transition Metal Dichalcogenide ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Direct Band Gap ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Direct Band ◽  
Pl Intensity ◽  
Fast Increase

AbstractIn atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1−x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1−x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono-layer to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1−x)Se2x, we performed a nano-angle-resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1−x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1−x)Se2x opens the way for spectrally tunable light-emitting devices.

Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays

2016 ◽  
Vol 27 (2) ◽  
pp. 1603682 ◽  
Author(s):  
Sanghyuck Yu ◽  
Jin Sung Kim ◽  
Pyo Jin Jeon ◽  
Jongtae Ahn ◽  
Jae Chul Park ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Gray Scale ◽  
Light Emitting ◽  
Organic Light ◽  
Transistor Circuits

scholarly journals Inhibited nonradiative decay at all exciton densities in monolayer semiconductors

Science ◽  
2021 ◽  
Vol 373 (6553) ◽  
pp. 448-452
Author(s):  
Hyungjin Kim ◽  
Shiekh Zia Uddin ◽  
Naoki Higashitarumizu ◽  
Eran Rabani ◽  
Ali Javey
Keyword(s):  
High Efficiency ◽  
Defect Density ◽  
Mechanical Strain ◽  
Transition Metal Dichalcogenide ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Practical Applications ◽  
Light Emitting Devices ◽  
Performance Metric ◽  
Exciton Annihilation

Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications. Here, by applying small mechanical strain (less than 1%), we circumvented VHS resonance and markedly suppressed EEA in monolayer TMDCs, resulting in near-unity PL QY at all exciton densities despite the presence of a high native defect density. Our findings can enable light-emitting devices that retain high efficiency at all brightness levels.

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