Single-Layer MoS2 Grown on Atomically Flat SrTiO3 Single Crystal for Enhanced Trionic Luminescence

ACS Nano ◽  
2021 ◽  
Author(s):  
Chenxi Huang ◽  
Jun Fu ◽  
Miaomiao Xiang ◽  
Jiefu Zhang ◽  
Hualing Zeng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Layer ◽  
Atomically Flat

Wedge Radius Effects in Mechanical Exfoliation of HOPG: A Molecular Simulation Study

2014 ◽  
Author(s):  
B. Jayasena ◽  
S. Subbiah ◽  
C. D. Reddy
Keyword(s):  
Molecular Dynamics ◽  
Pyrolytic Graphite ◽  
Single Layer ◽  
Layered Material ◽  
Critical Depth ◽  
Graphene Layers ◽  
Highly Ordered Pyrolytic Graphite ◽  
Single Sheet ◽  
Dynamics Simulations ◽  
Atomically Flat

We study the effects of wedge bluntness in mechanically exfoliating graphene layers from highly ordered pyrolytic graphite (HOPG), a layered material. Molecular dynamics simulations show that the layer initiation modes strongly depend on the wedge radius. Force and specific energy signatures are also markedly affected by the radius. Cleaving with a larger wedge radius causes buckling ahead of the wedge; larger the radius more the buckling. A critical depth of insertion of 1.6 A° is seen necessary to cleave a single layer; this is also found to be independent of wedge radius. Hence, with accurate positioning on an atomically flat HOPG surface it is possible to mechanically cleave, using a wedge, a single sheet of graphene even with a blunt wedge.

Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator

2004 ◽  
Vol 85 (3) ◽  
pp. 425-427 ◽  
Author(s):  
Keisuke Shibuya ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
Masashi Kawasaki ◽  
Hideomi Koinuma
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Effect Transistor ◽  
Atomically Flat

Fabrication and Magneto-Transport Properties of Zn0.88-xMgxMn0.12O/ZnO Heterostructures Grown on ZnO Single-Crystal Substrates

2010 ◽  
Vol 75 ◽  
pp. 1-8
Author(s):  
Keiichiro Masuko ◽  
Tatsuru Nakamura ◽  
Atsushi Ashida ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura
Keyword(s):  
Single Crystal ◽  
Transport Properties ◽  
Flat Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Brillouin Function ◽  
Atomic Force Microscope Observation ◽  
Zno Single Crystal ◽  
Atomically Flat

The transport properties of Zn0.88-xMgxMn0.12O/ZnO modulation-doped heterostructures (x≤0.15) were investigated. The heterostructures were fabricated on ZnO single-crystal substrates by a pulsed laser deposition system. Atomic force microscope observation and X-ray diffraction analysis suggested that Zn0.88-xMgxMn0.12O layers have atomically flat surface and excellent crystallinity. The results of Hall measurement for Zn0.88-xMgxMn0.12O/ZnO modulation-doped heterostructure with x=0.075 revealed that the carrier concentration and the electron mobility were 5.1×1012cm-2 and 800 cm2/Vs at 10 K, respectively, suggesting that the carrier confinement effect exits at the heterointerface between Zn0.88-xMgxMn0.12O barrier layer and ZnO channel layer. In the magnetoresistance (MR) measurement at 1.85 K, a positive MR behavior was observed below 0.5 T, while a negative MR behavior was recognized above 0.5 T. The slope of the positive MR decreased with increasing the temperature and was well fitted to the Brillouin function with S=5/2. The electrical and magneto-transport properties were very similar to those of Zn0.88Mn0.12O/ZnO heterostructures without doping Mg.

On-surface synthesis of one-type pore single-crystal porous covalent organic frameworks

2019 ◽  
Vol 55 (72) ◽  
pp. 10800-10803
Author(s):  
Zhenliang Hao ◽  
Lingling Song ◽  
Cuixia Yan ◽  
Hui Zhang ◽  
Zilin Ruan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Large Scale ◽  
Single Layer ◽  
Covalent Organic Frameworks

A 1,3,5-tris(4-bromophenyl)benzene precursor was employed to fabricate large-scale, one-type pore and single-layer pCOFs on the Ag(111) surface in a controllable manner.

Structure of the Ti-Single Crystal Si Interface

1990 ◽  
Vol 181 ◽  
Author(s):  
S. Ogawa ◽  
T. Kouzaki ◽  
T. Yoshida ◽  
R. Sinclair
Keyword(s):  
Amorphous Alloy ◽  
Single Crystal ◽  
Amorphous Layer ◽  
Alloy Formation ◽  
Transmission Electron ◽  
Impurity Species ◽  
Before And After ◽  
First Time ◽  
Atomically Flat ◽  
Eds Microanalysis

ABSTRACTThe Ti-single crystal Si interfaces, before and after annealing in argon, were examined by cross section high resolution transmission electron microscopy (HRTEM) combined for the first time with 2nmΦ probe for energy dispersive spectrometry (EDS). HRTEM shows that there is amorphous alloy formation at the Ti-Si interface. The thickness of the reacted layer is ∼1.7nm for single crystal Si, independent of doping level and impurity species such as As and B, and is ∼2.5nm for back sputter-amorphized Si. After annealing at 430°C for 30min, the thickness of the amorphous alloy increases up to ∼11.5nm. High spatial resolution EDS microanalysis has been obtained. The results show that reliable compositions can be deduced at this level since some of the layers are only about 2nm thick. The amorphous alloy formed at the deposition step was found to be Ti55Si45. After annealing, the composition across the amorphous layer varied from about 70%Si near the substrate to about 30%S1 close to the Ti interface. The substrate interface is atomically flat. Interpretation of the behavior in terms of the metastable Ti-Si phase diagram calculated by Holloway and Bormann will be discussed.

Highly Efficient Preparation of Single-Layer Two-Dimensional Polymer Obtained from Single-Crystal to Single-Crystal Synthesis

2021 ◽  
Vol 143 (15) ◽  
pp. 5636-5642
Author(s):  
Fan Hu ◽  
Wenbo Hao ◽  
David Mücke ◽  
Qingyan Pan ◽  
Zhibo Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Layer ◽  
Two Dimensional ◽  
Highly Efficient ◽  
Crystal Synthesis
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