scholarly journals Measurement of Exciton and Trion Energies in Multistacked hBN/WS2 Coupled Quantum Wells for Resonant Tunneling Diodes

ACS Nano ◽  
2020 ◽  
Vol 14 (11) ◽  
pp. 16114-16121
Author(s):  
Myoung-Jae Lee ◽  
David H. Seo ◽  
Sung Min Kwon ◽  
Dohun Kim ◽  
Youngwook Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Coupled Quantum Wells ◽  
Tunneling Diodes

SPIN FILTERING IN MAGNETIC HETEROSTRUCTURES

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3247-3252 ◽  
Author(s):  
D. O. Demchenko ◽  
A. N. Chantis ◽  
A. G. Petukhov
Keyword(s):  
Solid State ◽  
Quantum Wells ◽  
Resonant Tunneling ◽  
Magnetic Films ◽  
Resonant Tunneling Diodes ◽  
Exchange Splitting ◽  
Double Barrier ◽  
Molecular Beam Epitaxial ◽  
Tunneling Diodes ◽  
Spin Filtering

Several techniques were proposed to achieve solid state spin filtering such as magnetic tunnel junctions comprised of half-metallic compounds or solid state Stern-Gerlach apparatus. Another alternative consists in using spin-dependent resonant tunneling through magnetically active quantum wells. Recent advances in molecular beam epitaxial growth made it possible to fabricate exotic heterostructures comprised of magnetic films or buried layers (ErAs, GaxMn1-xAs) integrated with conventional semiconductors (GaAs) and to explore quantum transport in these heterostructures. It is particularly interesting to study spin-dependent resonant tunneling in double-barrier resonant tunneling diodes (RTD) with magnetic elements such as GaAs/AlAs/ErAs/AlAs/ErAs/AlAs/GaAs, GaxMn1-xAs/AlAs/GaAs/AlAs/GaAs, and GaAs/AlAs/GaxMn1-xAs/AlAs/GaAs. We present the results of our theoretical studies and computer simulations of transmission coefficients and current-voltage characteristics of resonant tunneling diodes based on these double-barrier structures. Resonant tunneling of holes (GaxMn1-xAs-based RTDs) is considered. Our approach is based on k·p perturbation theory with exchange splitting effects taken into account. We analyze exchange splitting of different resonant channels as a function of magnetization as well as spin polarization of the transmitted current as a function of bias. We found that resonant tunneling I – V characteristics of the double-barrier magnetic hererostructures strongly depend on the doping level in the emitter as well as on the orientation of the magnetization.

scholarly journals Atomic-scale Authentication with Resonant Tunneling Diodes

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1625-1629
Author(s):  
J. Roberts ◽  
I. E. Bagci ◽  
M. A. M. Zawawi ◽  
J. Sexton ◽  
N. Hulbert ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Atomic Scale ◽  
Resonant Tunneling Diodes ◽  
Physical Unclonable Functions ◽  
Tunneling Diodes ◽  
The Individual

ABSTRACTThe room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

scholarly journals Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

2013 ◽  
Vol 10 (18) ◽  
pp. 20130501-20130501 ◽  
Author(s):  
Hidetoshi Kanaya ◽  
Safumi Suzuki ◽  
Masahiro Asada
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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