Quantifying the Damage Induced by X-ray Photoelectron Spectroscopy Depth Profiling of Organic Conjugated Polymers

2019 ◽  
Vol 1 (6) ◽  
pp. 1372-1381 ◽  
Author(s):  
Yvonne J. Hofstetter ◽  
Yana Vaynzof
Keyword(s):  
Conjugated Polymers ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
X Ray ◽  
Organic Conjugated Polymers

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
K Value ◽  
X Ray ◽  
Dimethylamine Borane ◽  
The Stability ◽  
Low K ◽  
Secondary Ion ◽  
Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

scholarly journals Depth Profiling of the Chemical Composition of Free-Standing Carbon Dots Using X-ray Photoelectron Spectroscopy

2018 ◽  
Vol 122 (26) ◽  
pp. 14889-14897 ◽  
Author(s):  
Irene Papagiannouli ◽  
Minna Patanen ◽  
Valérie Blanchet ◽  
John D. Bozek ◽  
Manuel de Anda Villa ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Carbon Dots ◽  
Depth Profiling ◽  
Free Standing ◽  
X Ray

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

2019 ◽  
Vol 963 ◽  
pp. 226-229
Author(s):  
Kidist Moges ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Shinsuke Harada ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Annealing Duration ◽  
Nanometer Scale ◽  
Pure Nitrogen ◽  
X Ray ◽  
Initial Stage

We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.

X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

2010 ◽  
Vol 28 (2) ◽  
pp. L1-L4 ◽  
Author(s):  
T. Miyayama ◽  
N. Sanada ◽  
M. Suzuki ◽  
J. S. Hammond ◽  
S.-Q. D. Si ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Spectroscopy Study ◽  
X Ray ◽  
Cluster Ion

Hydrothermally grown BaZrO3 films on zirconium metal: Microstructure, x-ray photoelectron spectroscopy, and Auger electron spectroscopy depth profiling

1995 ◽  
Vol 10 (11) ◽  
pp. 2749-2754 ◽  
Author(s):  
V.M. Fuenzalida ◽  
M.E. Pilleux
Keyword(s):  
Photoelectron Spectroscopy ◽  
Dielectric Breakdown ◽  
Grazing Angle ◽  
Depth Profiling ◽  
Relative Dielectric Constant ◽  
Grain Structure ◽  
Hydrothermal Conditions ◽  
Oh Groups ◽  
X Ray ◽  
Zirconium Metal

BaZrO3 films were grown on zirconium metal substrates by immersing thin Zr foils in an alkaline solution under hydrothermal conditions. The films were produced at temperatures ranging from 200 °C to 270 °C in a 0.25 M barium hydroxide solution for 3 to 8 h. The resulting films did not have visible pores or defects, and displayed a grain structure which depended on the treatment conditions, especially temperature. X-ray photoelectron and Auger spectroscopies revealed that (a) after removing the surface layer, films were clean, not displaying OH groups nor carbon contamination; (b) the Ba concentration steadily decreased as the depth increased, and did not behave as in BaTiO3 or SrTiO3 films prepared under similar conditions; and (c) the BaZrO3/Zr interface was very broad. Grazing angle x-ray diffraction analysis showed BaZrO3 (cubic), ZrO2 (hexagonal), and Zr (hexagonal), suggesting a layered structure: BaZrO3/ZrO2/Zr. The relative dielectric constant was ≍70 and was independent of the frequency between 100 Hz and 1 MHz. The dielectric loss factor (tan δ) was between 0.01 and 0.02. Dielectric breakdown occurred between 25 and 40 MVm−1.

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

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