Understanding the Magnetic Memory Effect in Fe-Doped NiO Nanoparticles for the Development of Spintronic Devices

2018 ◽  
Vol 2 (1) ◽  
pp. 278-290 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
R. Pradeep ◽  
Yu-Chen Yeh ◽  
Tai-Yue Li ◽  
Chi-Yuan Wang ◽  
...  
Keyword(s):  
Memory Effect ◽  
Magnetic Memory ◽  
Nio Nanoparticles ◽  
Spintronic Devices

Surface-spin driven room temperature magnetic memory effect in Fe-substituted NiO nanoparticles

2021 ◽  
Vol 536 ◽  
pp. 147856
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Hsin-Hao Chiu ◽  
Kuan-Ting Wu ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Memory Effect ◽  
Room Temperature ◽  
Magnetic Memory ◽  
Nio Nanoparticles ◽  
Surface Spin

scholarly journals Room Temperature Magnetic Memory Effect in Cluster-Glassy Fe-Doped NiO Nanoparticles

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1318 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Tai-Yue Li ◽  
B. Vijaya Kumar ◽  
P. Muralidhar Reddy ◽  
Jen-Chih Peng ◽  
...  
Keyword(s):  
Magnetic Moment ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Oxide System ◽  
Precipitation Method ◽  
Magnetic Memory ◽  
Nio Nanoparticles ◽  
Magnetic Anisotropy Energy ◽  
Spintronic Devices ◽  
Co Precipitation

The Fe-doped NiO nanoparticles that were synthesized using a co-precipitation method are characterized by enhanced room-temperature ferromagnetic property evident from magnetic measurements. Neutron powder diffraction experiments suggested an increment of the magnetic moment of 3d ions in the nanoparticles as a function of Fe-concentration. The temperature, time, and field-dependent magnetization measurements show that the effect of Fe-doping in NiO has enhanced the intraparticle interactions due to formed defect clusters. The intraparticle interactions are proposed to bring additional magnetic anisotropy energy barriers that affect the overall magnetic moment relaxation process and emerging as room temperature magnetic memory. The outcome of this study is attractive for the future development of the room temperature ferromagnetic oxide system to facilitate the integration of spintronic devices and understanding of their fundamental physics.

scholarly journals Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ruyi Chen ◽  
Qirui Cui ◽  
Liyang Liao ◽  
Yingmei Zhu ◽  
Ruiqi Zhang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junctions ◽  
Low Power Consumption ◽  
Stray Field ◽  
Magnetic Memory ◽  
Spin Orbit ◽  
Theoretic Analysis ◽  
Spintronic Devices ◽  
Deterministic Switching ◽  
Moriya Interaction

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

scholarly journals Магнитостатическая энергия доменных стенок в одноосных пленках конечных размеров

2019 ◽  
Vol 61 (10) ◽  
pp. 1767
Author(s):  
П.М. Ветошко ◽  
Ф.П. Ветошко ◽  
В.Г. Шавров ◽  
В.И. Щеглов
Keyword(s):  
Domain Walls ◽  
Magnetic Sensors ◽  
Magnetization Distribution ◽  
Magnetic Memory ◽  
Spintronic Devices ◽  
Domain Structures ◽  
Magnetic Elements ◽  
Uniform Magnetization ◽  
Equilibrium Configurations ◽  
Equivalent Currents

AbstractThe solution to the problem of calculating the magnetostatic interaction energy of domain walls in uniaxial magnetics with a uniform magnetization distribution inside the domains is given. In carrying out the calculations, the principle of equivalent currents is used, assuming a uniform distribution of magnetization and its representation by equivalent currents flowing along the domain walls and along the surface. Analytical expressions for the mutual induction of two rectangular conductors with an arbitrary aspect ratio have been obtained. Results may be helpful in determining equilibrium configurations of domain structures in magnetic elements of spintronic devices, magnetic sensors and magnetic memory.

Magnetic memory effect in ZnO single crystals

2008 ◽  
Vol 50 (4) ◽  
pp. 638-641 ◽  
Author(s):  
E. A. Petrzhik ◽  
E. V. Darinskaya ◽  
L. N. Dem’yanets
Keyword(s):  
Single Crystals ◽  
Memory Effect ◽  
Magnetic Memory

Strong memory effect at room temperature in nanostructured granular alloy Co0.3Cu0.7

RSC Advances ◽  
2015 ◽  
Vol 5 (116) ◽  
pp. 95695-95702 ◽  
Author(s):  
S. Dhara ◽  
R. Roy Chowdhury ◽  
B. Bandyopadhyay
Keyword(s):  
Temperature Distribution ◽  
Memory Effect ◽  
Room Temperature ◽  
Blocking Temperature ◽  
Magnetic Memory

Non-interacting magnetic CoCu nanoparticles with a blocking temperature distribution show strong magnetic memory effect even at room temperature.

Phase-change magnetic memory effect in cation-deficient iron sulfide Fe1−xS

2006 ◽  
Vol 88 (1) ◽  
pp. 012512 ◽  
Author(s):  
Tomohiro Takayama ◽  
Hidenori Takagi
Keyword(s):  
Phase Change ◽  
Memory Effect ◽  
Iron Sulfide ◽  
Magnetic Memory
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