Improving Electrical Breakdown Strength of Polymer Nanocomposites by Tailoring Hybrid-Filler Structure for High-Voltage Dielectric Applications

2018 ◽  
Vol 1 (9) ◽  
pp. 4401-4407 ◽  
Author(s):  
Bo Li ◽  
Felipe Salcedo-Galan ◽  
Panagiotis I. Xidas ◽  
Evangelos Manias
Keyword(s):  
Polymer Nanocomposites ◽  
High Voltage ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Hybrid Filler ◽  
Electrical Breakdown Strength ◽  
Filler Structure

scholarly journals The Effects of Aluminum-Nitride Nano-Fillers on the Mechanical, Electrical, and Thermal Properties of High Temperature Vulcanized Silicon Rubber for High-Voltage Outdoor Insulator Applications

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3562 ◽  
Author(s):  
Chang Liu ◽  
Yiwen Xu ◽  
Daoguang Bi ◽  
Bing Luo ◽  
Fuzeng Zhang ◽  
...  
Keyword(s):  
Contact Angle ◽  
Thermal Properties ◽  
High Temperature ◽  
High Voltage ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Theoretical Models ◽  
Dielectric Constants ◽  
Silicon Rubber ◽  
Electrical Breakdown Strength

AlN nanoparticles were added into commercial high-temperature-vulcanized silicon rubber composites, which were designed for high-voltage outdoor insulator applications. The composites were systematically studied with respect to their mechanical, electrical, and thermal properties. The thermal conductivity was found to increase greatly (>100%) even at low fractions of the AlN fillers. The electrical breakdown strength of the composites was not considerably affected by the AlN filler, while the dielectric constants and dielectric loss were found to be increased with AlN filler ratios. At higher doping levels above 5 wt% (~2.5 vol%), electrical tracking performance was improved. The AlN filler increased the tensile strength as well as the hardness of the composites, and decreased their flexibility. The hydrophobic properties of the composites were also studied through the measurements of temperature-dependent contact angle. It was shown that at a doping level of 1 wt%, a maximum contact angle was observed around 108°. Theoretical models were used to explain and understand the measurement results. Our results show that the AlN nanofillers are helpful in improving the overall performances of silicon rubber composite insulators.

Theoretical study on the radical reaction mechanism in the cross-linking process of polyethylene

RSC Advances ◽  
2015 ◽  
Vol 5 (110) ◽  
pp. 90343-90353 ◽  
Author(s):  
Hui Zhang ◽  
Yan Shang ◽  
Mingxia Li ◽  
Hong Zhao ◽  
Xuan Wang ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
High Voltage ◽  
Theoretical Study ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Radical Reaction ◽  
Voltage Stabilizer ◽  
Cross Linking ◽  
Insulation Material ◽  
Electrical Breakdown Strength

The mechanism of the valerophenone voltage stabilizer for increasing the electrical breakdown strength of cross-linked polyethylene is expected to provide reliable information to prepare insulation material for high voltage cables up to 500 kV.

Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure

2021 ◽  
Vol 130 (14) ◽  
pp. 144101
Author(s):  
Jeffrey X. Zheng ◽  
Dixiong Wang ◽  
Pariasadat Musavigharavi ◽  
Merrilyn Mercy Adzo Fiagbenu ◽  
Deep Jariwala ◽  
...  
Keyword(s):  
Multilayer Structure ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Scandium Nitride ◽  
Strength Enhancement ◽  
Electrical Breakdown Strength

Carbon - silicon heterojunction diodes formed by CH4/ Ar rf plasma thin film deposition on Si substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
A. Putnis ◽  
K. K. Chan ◽  
K. J. Clay ◽  
...  
Keyword(s):  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Plasma ◽  
Type I ◽  
Si Substrates ◽  
Semiconducting Properties ◽  
Electrical Breakdown Strength ◽  
Poly Crystalline Diamond

ABSTRACTThin C films deposited from a CH4/Ar plasma on Si substrates kept at 20C are shown to be semiconducting. The semiconducting properties are associated with the poly-crystalline diamond grains present within the films. Diode type I-V characteristics observed from AVC/Si verticle structures are explained by the action of a C-Si heterojunction. A band gap of 2eV, a resistivity of 106Ω.cm and an electrical breakdown strength of 5.106 V/cm are estimated for the C.

scholarly journals Significantly Improved Electrical Breakdown Strength of Natural Ester Liquid Dielectrics by Doping Ultraviolet Absorbing Molecules

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 73448-73454 ◽  
Author(s):  
Suning Liang ◽  
Feipeng Wang ◽  
Zhengyong Huang ◽  
Weigen Chen ◽  
Youyuan Wang ◽  
...  
Keyword(s):  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Electrical Breakdown Strength ◽  
Liquid Dielectrics ◽  
Natural Ester
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