Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory

2018 ◽  
Vol 1 (9) ◽  
pp. 4633-4641 ◽  
Author(s):  
Sabina Spiga ◽  
Francesco Driussi ◽  
Gabriele Congedo ◽  
Claudia Wiemer ◽  
Alessio Lamperti ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Nonvolatile Memory ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Excellent Thermal Stability

Highly Scalable ALD-deposited Hafnium Silicate Gate Stacks for Low Standby Power Applications

2006 ◽  
Vol 917 ◽  
Author(s):  
Johan Swerts ◽  
Wim Deweerd ◽  
Chang-gong Wang ◽  
Yanina Fedorenko ◽  
Annelies Delabie ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Equivalent Oxide Thickness ◽  
Gate Leakage ◽  
Gate Stacks ◽  
Hafnium Silicate ◽  
Scaling Potential

AbstractThe electrical performance of hafnium silicate (HfSiOx) gate stacks grown by atomic layer deposition (ALD) has been evaluated in capacitors and transistors. First, scaling potential of HfSiOx layers was studied as function of composition and thickness. It is shown that the equivalent oxide thickness scales down with decreasing layer thickness and increasing Hf-content. The gate leakage (at Vfb-1V), however, is mainly determined by the physical layer thickness. For the same equivalent oxide thickness (EOT) target, the lowest leakage is observed for the layers with the highest Hf-content. Leakage values as low as 1x10-3 A/cm2 for an equivalent oxide thickness of 1.3 nm have been obtained. Second, the thermal stability against crystallization of the ALD HfSiOx has been studied and related to their electrical properties. The thermal stability of HfSiOx decreases with increasing Hf-content that necessitates the use of nitridation. The influence of various annealing conditions on the nitrogen incorporation is also studied. Finally, the effect of HfSiOx composition and postdeposition nitridation is discussed on transistor level. TaN metal gate transistor data indicate that nitridation reduces the gate leakage and that Hf-rich HfSiOx layers show the best scaling potential, i.e., highest performance for the lowest gate leakage.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

scholarly journals Boosted piezoelectricity with excellent thermal stability in tetragonal NaNbO3-based ceramics

2020 ◽  
Author(s):  
Lu Wang ◽  
Shengdong Sun ◽  
Huajie Luo ◽  
Yang Ren ◽  
Hui Liu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Temperature Stability ◽  
Lead Free ◽  
Excellent Thermal Stability ◽  
Lead Free Ceramics ◽  
Piezoelectric Performance

The realization of high piezoelectric performance and excellent temperature stability simultaneously in lead-free ceramics is the key for replacing Pb-containing perovskites in industry. In this study, large piezoelectric performance (d33...

scholarly journals The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetic Anisotropy ◽  
High Stability ◽  
Essential Role ◽  
Perpendicular Magnetic Anisotropy ◽  
Low Energy ◽  
High Resistivity ◽  
Excellent Thermal Stability ◽  
Low Energy Consumption

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

2011 ◽  
Vol 55 (1) ◽  
pp. 64-67 ◽  
Author(s):  
W.B. Chen ◽  
C.H. Cheng ◽  
C.W. Lin ◽  
P.C. Chen ◽  
Albert Chin
Keyword(s):  
High Field ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Metal Gate ◽  
Field Mobility

Preparation of polyetheretherketone composites with nanohydroxyapatite rods and carbon nanofibers having high strength, good biocompatibility and excellent thermal stability

RSC Advances ◽  
2016 ◽  
Vol 6 (23) ◽  
pp. 19417-19429 ◽  
Author(s):  
Kai Wang Chan ◽  
Cheng Zhu Liao ◽  
Hoi Man Wong ◽  
Kelvin Wai Kwok Yeung ◽  
Sie Chin Tjong
Keyword(s):  
Thermal Stability ◽  
Carbon Nanofibers ◽  
Hybrid Composite ◽  
High Strength ◽  
Excellent Thermal Stability ◽  
Good Biocompatibility

The WST-1 assay shows that the PEEK/15 vol% nHA–1.9 vol% CNF hybrid composite has excellent biocompatibility.

Ba3YB3O9 based phosphor ceramic plates with excellent thermal stability for wLEDs applications

2021 ◽  
Author(s):  
Weiwei Wu ◽  
Yuanpeng Zhang ◽  
Yuepin Zhang ◽  
Jianxu Hu
Keyword(s):  
Thermal Stability ◽  
Solution Combustion ◽  
Excellent Thermal Stability

A series of Eu3+ and Tb3+ singly doped Ba3YB3O9 phosphors were synthesized by a solution combustion approach. The most luminescent phosphors were selected as the starting materials to fabricate phosphor...

Ultrahigh energy density with excellent thermal stability in lead-free multilayer ceramic capacitors via composite strategy design

2021 ◽  
Author(s):  
Peiyao Zhao ◽  
Lingling Chen ◽  
Longtu Li ◽  
Xiaohui Wang
Keyword(s):  
Thermal Stability ◽  
Energy Density ◽  
Low Energy ◽  
Electronic Systems ◽  
Ultrahigh Energy ◽  
Multilayer Ceramic Capacitors ◽  
Excellent Thermal Stability ◽  
Practical Applications ◽  
Multilayer Ceramic ◽  
Strategy Design

Dielectric capacitor has received growing interest for advanced electrical and electronic systems. However, the low energy density and poor thermal stability at high temperature severely hinder its practical applications. Herein,...

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