scholarly journals Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters

2018 ◽  
Vol 1 (8) ◽  
pp. 3986-3997 ◽  
Author(s):  
Ana Rovisco ◽  
Rita Branquinho ◽  
Jorge Martins ◽  
Maria João Oliveira ◽  
Daniela Nunes ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Seed Layer ◽  
Chemical Parameters ◽  
Free Zinc ◽  
Zinc Tin Oxide ◽  
Seed Layer Free

Shape Effect of Zinc-Tin Oxide Nanostructures on Photodegradation of Methylene Blue and Rhodamine B under UV and Visible Light

2021 ◽  
Vol 4 (2) ◽  
pp. 1149-1161 ◽  
Author(s):  
Ana Rovisco ◽  
Rita Branquinho ◽  
Jonas Deuermeier ◽  
Tomás Freire ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Visible Light ◽  
Tin Oxide ◽  
Rhodamine B ◽  
Shape Effect ◽  
Oxide Nanostructures ◽  
Zinc Tin Oxide

Er3+/Yb3+ activated up-conversion luminescence of zinc-tin-oxide-based powders

2021 ◽  
Author(s):  
Tamara B. Ivetić ◽  
Yicong Ding ◽  
Miroslav Cvetinov ◽  
Jelena Petrović ◽  
Olivera R. Klisurić ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Zinc Tin Oxide

scholarly journals Facet controlled growth mechanism of SnO2 (101) nanosheet assembled film via cold crystallization

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yoshitake Masuda
Keyword(s):  
Crystal Growth ◽  
Tin Oxide ◽  
Chemical Sensors ◽  
Seed Layer ◽  
Flat Surface ◽  
Crystallographic Analysis ◽  
Cold Crystallization ◽  
Type I ◽  
Type Ii ◽  
Oxide Substrate

AbstractCold crystallization of SnO2 was realized in aqueous solutions, where crystal growth was controlled to form SnO2 (101) nanosheet assembled films for devices such as chemical sensors. The nanosheets grew directly on a fluorine-doped tin oxide substrate without a seed layer or a buffer layer. The nanosheets had a thickness of 5–10 nm and an in-plane size of 100–1600 nm. Moreover, the large flat surface of the (101) facet was metastable. The thickness of the SnO2 (101) nanosheet assembled film was approximately 800 nm, and the film had a gradient structure that contained many connected nanosheets. TEM results revealed that the predominate branch angles between any two connected nanosheets were 90° and 46.48°, corresponding to type I and type II connections, respectively. These connections were consistent with the calculations based on crystallography. Crystallographic analysis clarified the characteristic crystal growth of the SnO2 (101) nanosheet assembled film in the aqueous solution. Furthermore, we demonstrate that the metastable (101) facet can be exploited to control the rate of crystal growth by adjusting the etching condition.

scholarly journals Violet-light stimulated synaptic and learning functions in a zinc–tin oxide photoelectric transistor for neuromorphic computation

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 42682-42687
Author(s):  
Ting-Ruei Lin ◽  
Li-Chung Shih ◽  
Po-Jen Cheng ◽  
Kuan-Ting Chen ◽  
Jen-Sue Chen
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Violet Light ◽  
Learning Functions ◽  
Zinc Tin Oxide

Photonic potentiation and electric depression are realized in a ZTO thin film transistor for the application in neuromorphic computation.

scholarly journals X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

2014 ◽  
Vol 104 (24) ◽  
pp. 242113 ◽  
Author(s):  
Sin Cheng Siah ◽  
Sang Woon Lee ◽  
Yun Seog Lee ◽  
Jaeyeong Heo ◽  
Tomohiro Shibata ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Tin Oxide ◽  
Electron Mobility ◽  
Structural Disorder ◽  
Oxide Thin Films ◽  
X Ray ◽  
Zinc Tin Oxide ◽  
The Impact ◽  
X Ray Absorption

Impacts of Sn precursors on solution-processed amorphous zinc–tin oxide films and their transistors

RSC Advances ◽  
2012 ◽  
Vol 2 (12) ◽  
pp. 5307 ◽  
Author(s):  
Yunlong Zhao ◽  
Guifang Dong ◽  
Lian Duan ◽  
Juan Qiao ◽  
Deqiang Zhang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Oxide Films ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films
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