scholarly journals Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers

2021 ◽  
Vol 4 (2) ◽  
pp. 2153-2159
Author(s):  
J. Elliott Ortmann ◽  
Albina Y. Borisevich ◽  
Sunah Kwon ◽  
Agham Posadas ◽  
Moon J. Kim ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Three Dimensional ◽  
Nanometer Scale ◽  
Functional Oxides ◽  
Neuromorphic Computing ◽  
Oxygen Scavenging

Monte Carlo Simulation of Precipitate Nucleation and Growth: Time Dependent Results

1988 ◽  
Vol 141 ◽  
Author(s):  
James P. Lavine ◽  
Gilbert A. Hawkins
Keyword(s):  
Monte Carlo ◽  
Crystalline Silicon ◽  
Three Dimensional ◽  
Nucleation Site ◽  
Nucleation And Growth ◽  
Lattice Points ◽  
Growth Time ◽  
Decay Kinetics ◽  
Time Step ◽  
Oxygen Atoms

AbstractA three-dimensional Monte Carlo computer program has been developed to study the heterogeneous nucleation and growth of oxide precipitates during the thermal treatment of crystalline silicon. In the simulations, oxygen atoms move on a lattice with randomly selected lattice points serving as nucleation sites. The change in free energy that the oxygen cluster would experience in gaining or losing one oxygen atom is used to govern growth or dissolution of the cluster. All the oxygen atoms undergo a jump or a growth decision during each time step of the anneal. The growth and decay kinetics of each nucleation site display interesting fluctuation phenomena. The time dependence of the cluster size generally differs from the expected 3/2 power law due to the fluctuations in oxygen arrival at and incorporation in a precipitate. Competition between growing sites and coarsening are observed.

scholarly journals Three-Dimensional Measurements of Micro- to Nanometer-Scale Features at and Below the Surface Using Scanning Electron Microscopy

2011 ◽  
Vol 17 (S2) ◽  
pp. 992-993
Author(s):  
M Zhao ◽  
B Ming ◽  
P Kavuri ◽  
A Vladár
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Three Dimensional ◽  
Nanometer Scale ◽  
Dimensional Measurements ◽  
Scanning Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Manufacture of Submicron Light-Emitting Porous Silicon Areas for Miniature LEDs

1995 ◽  
Vol 380 ◽  
Author(s):  
S. P. Duttagupta ◽  
C. Peng ◽  
L. Tsybeskov ◽  
P. M. Fauchet
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Group Formation ◽  
Nanometer Scale ◽  
Ion Milling ◽  
Light Emitting ◽  
Atomic Force ◽  
Mapping Techniques ◽  
Trilayer Process

ABSTRACTWe have investigated several methods to form submicron-size porous silicon regions. Porous silicon can emit light from the violet to past 1.5 μm with high photoluminescence efficiency at room temperature. It is composed of a high density of nanometer-scale crystalline silicon wires or dots. To integrate light-emitting porous silicon (LEPSi) LEDs with conventional Si microelectronics, it is necessary to produce miniature LEPSi regions adjacent to fully protected crystalline silicon regions. These techniques can be divided into two groups. In the first group formation of LEPSi is prevented during electrochemistry. Using optical and electron beam lithography, and a trilayer process with silicon nitride or amorphization by ion-implantation, we have made LEPSi patterns as small as 100 nm. In the second group, the formation of LEPSi during electrochemistry is enhanced by ion-milling or reactive ion-etching which we have found to help the pore nucleation. We have used a variety of mapping techniques, such as photoluminescence, atomic force and electron beam microscopies, to characterize the sharpness of the interface between the porous silicon and crystalline silicon regions.

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