Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources

2021 ◽  
Author(s):  
Qimiao Chen ◽  
Liyao Zhang ◽  
Yuxin Song ◽  
Xiren Chen ◽  
Sebastian Koelling ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Sources ◽  
Ge Quantum Dots ◽  
Self Assembled ◽  
Inp Substrates

Atomic Force Microscopy and Spectroscopy of Self-Assembled InAsSb Quantum Dots grown on InP Substrates by MOCVD

2004 ◽  
Vol 829 ◽  
Author(s):  
Yongkun Sin ◽  
Hyun I. Kim ◽  
Gary W. Stupian ◽  
Yueming Qiu
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Light Sources ◽  
Photoluminescence Intensity ◽  
Atomic Force ◽  
Self Assembled ◽  
Inp Substrates

ABSTRACTInAsSb quantum dot (QD) lasers are promising light sources with emission wavelengths beyond 2μm as recently demonstrated. We report the first detailed atomic force microscope (AFM) characterization of uncapped InAsSb quantum dots self-assembled on GaAs/In0.53Ga0.47As layers. These quantum dot structures are grown on (100) InP substrates by metal organic chemical vapor deposition (MOCVD). Growth conditions are chosen to maximize photoluminescence intensity and to obtain high output powers from Fabry-Perot lasers with one stack of InAsSb QDs. Conductive AFM is employed to simultaneously study topography, current image, and current-voltage (I-V) characteristics from various InAs1-ySby QDs with y varied between 0 and 0.25. Typical dot density is 4–5×1010/cm2 and dots are estimated to have a lateral dimension at the base of ∼40nm and a height of 2–5nm. I-V characteristics measured from individual InAsSb QDs are compared to those from InAs QDs. Also reported are electronic properties including energy band gaps of InAs and InAsSb QDs.

scholarly journals Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

2011 ◽  
Vol 22 (29) ◽  
pp. 295304 ◽  
Author(s):  
A Pérez del Pino ◽  
E György ◽  
I C Marcus ◽  
J Roqueta ◽  
M I Alonso
Keyword(s):  
Quantum Dots ◽  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
Si Substrates ◽  
Ge Quantum Dots ◽  
Self Assembled

Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

2004 ◽  
Vol 21 (2-4) ◽  
pp. 312-316 ◽  
Author(s):  
D Bougeard ◽  
P.H Tan ◽  
M Sabathil ◽  
P Vogl ◽  
G Abstreiter ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Ge Quantum Dots ◽  
Self Assembled

Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator

2011 ◽  
Vol 40 (8) ◽  
pp. 1769-1774 ◽  
Author(s):  
M. Gogna ◽  
E. Suarez ◽  
P.-Y. Chan ◽  
F. Al-Amoody ◽  
S. Karmakar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ge Quantum Dots ◽  
Self Assembled ◽  
Lattice Matched

Shape Transition in Self-Organized InAs/InP Nanostructures

2001 ◽  
Vol 707 ◽  
Author(s):  
H.R. Gutiérrez ◽  
M.A. Cotta ◽  
M.M.G. de Carvalho
Keyword(s):  
Quantum Dots ◽  
Driving Force ◽  
Anisotropic Diffusion ◽  
Chemical Potential ◽  
Quantum Wires ◽  
Shape Transition ◽  
Self Organized ◽  
Self Assembled ◽  
Inp Substrates ◽  
Stable Shape

ABSTRACTIn this letter we report the transition from self-assembled InAs quantum-wires to quantum-dots grown on (100) InP substrates. This transition is obtained when the wires are annealed at the growth temperature. Our results suggest that the quantum-wires are a metastable shape originated from the anisotropic diffusion over the InP buffer layer during the formation of the first InAs monolayer. The wires evolve to a more stable shape (dot) during the annealing. The driving force for the transition is associated with variations in the elastic energy and hence in the chemical potential produced by height fluctuations along the wire. The regions along the wires with no height variations are more stable allowing the formation of complex, self-assembled nanostructures such as dots interconnected by wires.

Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates

2009 ◽  
Vol 246 (4) ◽  
pp. 721-724 ◽  
Author(s):  
Tae-Sik Yoon ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim ◽  
Du Yeol Ryu ◽  
Thomas P. Russell ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nanometer Scale ◽  
Growth Behaviour ◽  
Ge Quantum Dots ◽  
Self Assembled

scholarly journals Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

2003 ◽  
Vol 83 (25) ◽  
pp. 5283-5285 ◽  
Author(s):  
S. W. Lee ◽  
L. J. Chen ◽  
P. S. Chen ◽  
M.-J. Tsai ◽  
C. W. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ge Quantum Dots ◽  
Self Assembled

Ferromagnetism in self-assembled Ge quantum dots material followed by Mn-implantation and annealing

2008 ◽  
Vol 52 (6) ◽  
pp. 871-876 ◽  
Author(s):  
I.T. Yoon ◽  
C.J. Park ◽  
S.W. Lee ◽  
T.W. Kang ◽  
D.W. Koh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ge Quantum Dots ◽  
Self Assembled

Self-assembled Ge quantum dots on Si and their applications

2002 ◽  
Vol 237-239 ◽  
pp. 1892-1897 ◽  
Author(s):  
K.L. Wang ◽  
J.L. Liu ◽  
G. Jin
Keyword(s):  
Quantum Dots ◽  
Ge Quantum Dots ◽  
Self Assembled
Sign in / Sign up

Export Citation Format

Share Document