scholarly journals Mapping Time-Dependent Conductivity of Metallic Nanowire Networks by Electrical Resistance Tomography toward Transparent Conductive Materials

2020 ◽  
Vol 3 (12) ◽  
pp. 11987-11997 ◽  
Author(s):  
Gianluca Milano ◽  
Alessandro Cultrera ◽  
Katarzyna Bejtka ◽  
Natascia De Leo ◽  
Luca Callegaro ◽  
...  
Keyword(s):  
Electrical Resistance ◽  
Time Dependent ◽  
Electrical Resistance Tomography ◽  
Conductive Materials ◽  
Metallic Nanowire Networks ◽  
Nanowire Networks

scholarly journals Recommended implementation of electrical resistance tomography for conductivity mapping of metallic nanowire networks using voltage excitation

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alessandro Cultrera ◽  
Gianluca Milano ◽  
Natascia De Leo ◽  
Carlo Ricciardi ◽  
Luca Boarino ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistance ◽  
Signal To Noise Ratio ◽  
Constant Current ◽  
Constant Voltage ◽  
Signal To Noise ◽  
Electrical Resistance Tomography ◽  
Measurement Protocol ◽  
Metallic Nanowire Networks ◽  
Nanowire Networks

AbstractThe knowledge of the spatial distribution of the electrical conductivity of metallic nanowire networks (NWN) is important for tailoring the performance in applications. This work focuses on Electrical Resistance Tomography (ERT), a technique that maps the electrical conductivity of a sample from several resistance measurements performed on its border. We show that ERT can be successfully employed for NWN characterisation if a dedicated measurement protocol is employed. When applied to other materials, ERT measurements are typically performed with a constant current excitation; we show that, because of the peculiar microscopic structure and behaviour of metallic NWN, a constant voltage excitation protocols is preferable. This protocol maximises the signal to noise ratio in the resistance measurements—and thus the accuracy of ERT maps—while preventing the onset of sample alterations.

scholarly journals Metallic nanowire networks: effects of thermal annealing on electrical resistance

Nanoscale ◽  
2014 ◽  
Vol 6 (22) ◽  
pp. 13535-13543 ◽  
Author(s):  
D. P. Langley ◽  
M. Lagrange ◽  
G. Giusti ◽  
C. Jiménez ◽  
Y. Bréchet ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Electrical Resistance ◽  
Transparent Electrodes ◽  
Metallic Nanowire Networks ◽  
Nanowire Networks ◽  
Metal Nanowire

Metallic nanowire networks have huge potential in devices requiring transparent electrodes. This article describes how the electrical resistance of metal nanowire networks evolve under thermal annealing. Understanding the behavior of such films is crucial for the optimization of transparent electrodes which find many applications.

scholarly journals Optimisation of Sensor Electrode Size for in Electrical Resistance Tomography Implementing Conducting Boundary Strategy

2021 ◽  
Vol 1874 (1) ◽  
pp. 012077
Author(s):  
Suzanna Ridzuan Aw ◽  
Ruzairi Abdul Rahim ◽  
Fazlul Rahman Mohd Yunus ◽  
Mohd Hafiz Fazalul Rahiman ◽  
Yasmin Abdul Wahab ◽  
...  
Keyword(s):  
Electrical Resistance ◽  
Electrical Resistance Tomography ◽  
Electrode Size ◽  
Sensor Electrode

scholarly journals Influences of advanced glycosylation end products on the inner blood–retinal barrier in a co-culture cell model in vitro

2020 ◽  
Vol 15 (1) ◽  
pp. 619-628
Author(s):  
Chen Yuan ◽  
Ya Mo ◽  
Jie Yang ◽  
Mei Zhang ◽  
Xuejun Xie
Keyword(s):  
Electrical Resistance ◽  
Cell Model ◽  
Polyclonal Antibodies ◽  
Time Dependent ◽  
Dependent Manner ◽  
Blood Retinal Barrier ◽  
Advanced Glycosylation End Products ◽  
End Products ◽  
Advanced Glycosylation

AbstractAdvanced glycosylation end products (AGEs) are harmful factors that can damage the inner blood–retinal barrier (iBRB). Rat retinal microvascular endothelial cells (RMECs) were isolated and cultured, and identified by anti-CD31 and von Willebrand factor polyclonal antibodies. Similarly, rat retinal Müller glial cells (RMGCs) were identified by H&E staining and with antibodies of glial fibrillary acidic protein and glutamine synthetase. The transepithelial electrical resistance (TEER) value was measured with a Millicell electrical resistance system to observe the leakage of the barrier. Transwell cell plates for co-culturing RMECs with RMGCs were used to construct an iBRB model, which was then tested with the addition of AGEs at final concentrations of 50 and 100 mg/L for 24, 48, and 72 h. AGEs in the in vitro iBRB model constructed by RMEC and RMGC co-culture led to the imbalance of the vascular endothelial growth factor (VEGF) and pigment epithelial derivative factor (PEDF), and the permeability of the RMEC layer increased because the TEER decreased in a dose- and time-dependent manner. AGEs increased VEGF but lowered PEDF in a dose- and time-dependent manner. The intervention with AGEs led to the change of the transendothelial resistance of the RMEC layer likely caused by the increased ratio of VEGF/PEDF.

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