Covalently Linked Hexagonal Boron Nitride-Graphene Oxide Nanocomposites as High-Performance Oil-Dispersible Lubricant Additives

2020 ◽  
Vol 3 (11) ◽  
pp. 10941-10953
Author(s):  
Suprakash Samanta ◽  
Rashmi R. Sahoo
Keyword(s):  
Graphene Oxide ◽  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Lubricant Additives ◽  
Covalently Linked

scholarly journals Boron nitride nanoplatelets as two-dimensional thermal fillers in epoxy composites: new scenarios at very low filler loadings

2020 ◽  
Vol 40 (10) ◽  
pp. 859-867
Author(s):  
Yao Shi ◽  
Genlian Lin ◽  
Xi-Fei Ma ◽  
Xiao Huang ◽  
Jing Zhao ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Boron Nitride ◽  
Filler Content ◽  
Hexagonal Boron Nitride ◽  
Filler Loading ◽  
Epoxy Composites ◽  
General Phenomenon ◽  
Sudden Drop ◽  
Reduced Graphene ◽  
Thermal Conducting

AbstractHexagonal boron nitride (h-BN) nanoplatelets (0.6 μm in diameter and 100 nm in thickness) are introduced into epoxy resin to improve the polymer’s thermal conducting ability. As expected, the thermal conductivities (TCs) of the composites, especially the in-plane TCs, are significantly increased. The in-plane TC of the epoxy composites can reach 1.67 W/mK at only 0.53 wt% loading, indicating h-BN nanopletelets are very effective thermal fillers. However, after carefully studied the correlation of the TC improvement and filler content, a sudden drop of the TC around 0.53 wt% filler loading is observed. Such an unexpected decrease in TC has never been reported and is also found to be consistent with the Tg changes versus filler content. Similar trend is also observed in other 2-D nanofillers, such as graphene oxide, reduced graphene oxide, which may indicate it is a general phenomenon for 2-D nanofillers. SEM results suggest that such sudden drop in TC might be coming from the enrichment of these 2-D nanofillers in localized areas due to their tendency to form more ordered phase above certain concentrations.

Reaction Synthesized Boron Nitride-Containing Composites (BNCC)

2007 ◽  
Vol 280-283 ◽  
pp. 1385-1390
Author(s):  
Guo Jun Zhang ◽  
Tatsuki Ohji ◽  
Shuzo Kanzaki
Keyword(s):  
Boron Nitride ◽  
Hot Pressing ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
High Strength ◽  
Reactive Sintering ◽  
Boron Source ◽  
Inorganic Reactions ◽  
Reactive Hot Pressing

Based on the proposed inorganic reactions a series of high performance hexagonal boron nitride-containing composites (BNCC), include SiC-BN, Si3N4-SiC-BN, SiAlON-BN, AlN-BN, Al2O3-BN, AlON-BN and mullite-BN, have been prepared via reactive hot pressing or pressureless reactive sintering. Various boron-bearing components such as B, B4C, AlB2, SiB4, SiB6, B2O3 or H3BO3, 9Al2O3×2B2O3 (9A2B) and 2Al2O3×B2O3 (2AB) are used as the boron source. On the other hand, nitrogen gas or solid state nitirgen-bearing metal nitrides such as Si3N4 and AlN can be used as the nitrogen source. The in situ synthesized composites demonstrated homogeneous and isotropical microstructures with very fine (nano-sized) BN platelets or their agglomerates distributed in the matrixes. These composites showed high strength, low elasticity and improved strain tolerance. In this article the reaction design, thermodynamics, reaction mechanisms, reactive hot pressing or pressureless reactive sintering, microstructures and mechanical properties will be discussed.

scholarly journals Three-Dimensional Heterostructured Reduced Graphene Oxide-Hexagonal Boron Nitride-Stacking Material for Silicone Thermal Grease with Enhanced Thermally Conductive Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 938 ◽  
Author(s):  
Weijie Liang ◽  
Xin Ge ◽  
Jianfang Ge ◽  
Tiehu Li ◽  
Tingkai Zhao ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Boron Nitride ◽  
Reduced Graphene Oxide ◽  
Hexagonal Boron Nitride ◽  
Three Dimensional ◽  
Thermal Interface Materials ◽  
Reduced Graphene ◽  
Thermally Conductive ◽  
Thermal Grease ◽  
Conductive Properties

The thermally conductive properties of silicone thermal grease enhanced by hexagonal boron nitride (hBN) nanosheets as a filler are relevant to the field of lightweight polymer-based thermal interface materials. However, the enhancements are restricted by the amount of hBN nanosheets added, owing to a dramatic increase in the viscosity of silicone thermal grease. To this end, a rational structural design of the filler is needed to ensure the viable development of the composite material. Using reduced graphene oxide (RGO) as substrate, three-dimensional (3D) heterostructured reduced graphene oxide-hexagonal boron nitride (RGO-hBN)-stacking material was constructed by self-assembly of hBN nanosheets on the surface of RGO with the assistance of binder for silicone thermal grease. Compared with hBN nanosheets, 3D RGO-hBN more effectively improves the thermally conductive properties of silicone thermal grease, which is attributed to the introduction of graphene and its phonon-matching structural characteristics. RGO-hBN/silicone thermal grease with lower viscosity exhibits higher thermal conductivity, lower thermal resistance and better thermal management capability than those of hBN/silicone thermal grease at the same filler content. It is feasible to develop polymer-based thermal interface materials with good thermal transport performance for heat removal of modern electronics utilising graphene-supported hBN as the filler at low loading levels.

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Science ◽  
2018 ◽  
Vol 362 (6416) ◽  
pp. 817-821 ◽  
Author(s):  
Joo Song Lee ◽  
Soo Ho Choi ◽  
Seok Joon Yun ◽  
Yong In Kim ◽  
Stephen Boandoh ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Monolayer Films ◽  
Single Crystalline ◽  
Wafer Scale ◽  
Liquid Gold ◽  
Grain Formation

Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

2014 ◽  
Vol 104 (5) ◽  
pp. 053103 ◽  
Author(s):  
Seung Hwan Lee ◽  
Min Sup Choi ◽  
Jia Lee ◽  
Chang Ho Ra ◽  
Xiaochi Liu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Hetero Structure ◽  
Tunneling Diodes
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