Quantum Confinement in the Spectral Response of n-Doped Germanium Quantum Dots Embedded in an Amorphous Si Layer for Quantum Dot-Based Solar Cells

2020 ◽  
Vol 3 (3) ◽  
pp. 2813-2821
Author(s):  
Jacopo Parravicini ◽  
Francesco Di Trapani ◽  
Michael D. Nelson ◽  
Zachary T. Rex ◽  
Ryan D. Beiter ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Quantum Confinement ◽  
Spectral Response ◽  
Amorphous Si ◽  
Germanium Quantum Dots

InAs Quantum Dot Development for Enhanced InGaAs Space Solar Cells

2004 ◽  
Vol 851 ◽  
Author(s):  
R. P. Raffaelle ◽  
Samar Sinharoy ◽  
C. William King ◽  
S. G. Bailey
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Triple Junction ◽  
Spectral Response ◽  
Short Circuit ◽  
Theoretical Estimate ◽  
Inas Quantum Dots ◽  
Bottom Cell ◽  
Inas Quantum Dot

ABSTRACTThe majority of high-efficiency space solar cells being produced today are based on multi-junction devices of lattice-matched III-V materials. An alternative which has been receiving an increasing amount of attention is the lattice mis-matched or metamorphic approach to multi-junction cell development. In the metamorphic triple junction cell under development by ERI and its partners, the InGaAs junction (bottom cell) of the three-cell stack is the current limiting entity, due to the current matching which must be maintained through the device. This limitation may be addressed through the incorporation of InAs quantum dot array into the depletion region of an InGaAs cell. The InAs quantum dots in the InGaAs cell will provide sub-gap absorption and thus improve its short circuit current. This cell could then be integrated into the three-cell stack to achieve a space solar cell whose efficiency exceeds current state-of-the-art standards. A theoretical estimate predicts that a InGaAlP(1.95eV)/InGaAsP(1.35 eV)/InGaAs(1.2 eV) triple junction cell incorporating quantum dots to improve the bottom cell current would have an efficiency exceeding 40%. In addition, theoretical estimates have demonstrated that the use of quantum dot structures may also hold other cell benefits such as improved temperature coefficients and better radiation tolerance, which are especially important for utilization in space. As a first step towards achieving that goal, we have initiated the development of InAs quantum dots on lattice-mismatched InGaAs (1.2 eV bandgap) grown epitaxially on GaAs by metallorganic vapor phase epitaxy (MOVPE). These quantum dots have been characterized via photoluminescence (PL) and atomic force microscopy (AFM). A correlation exists between the quantum dot size and resulting optical band structure and can be controlled via the synthesis parameters. Quantum dots were incorporated into prototype InGaAs devices. A comparison of the resulting photovoltaic efficiency under simulated 1 sun intensity and air mass zero (AM0) illumination and spectral response demonstrated that an improvement in the long-wavelength photoconversion efficiency was achieved through the incorporation of the InAs quantum dots.

scholarly journals Flexible and efficient perovskite quantum dot solar cells via hybrid interfacial architecture

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Mechanical Stability ◽  
Mechanical Adhesion ◽  
Perovskite Quantum Dots ◽  
Efficient Charge ◽  
Photovoltaic Technologies

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.

Anisotropic Nanostructure ZnO Photoelectrodes for CdS/CdSe Quantum Dot Sensitized Solar Cells

2013 ◽  
Vol 873 ◽  
pp. 556-561
Author(s):  
Jian Jun Tian
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Chemical Bath Deposition ◽  
Cdse Quantum Dots ◽  
Silar Method ◽  
Nanorods Array ◽  
Cdse Quantum Dot ◽  
Cbd Method ◽  
Sensitized Solar Cells

CdS/CdSe quantum dots co-sensitized solar cells (QDSCs) were prepared by combining the successive ion layer absorption and reaction (SILAR) method and chemical bath deposition (CBD) method for the fabrication of CdS and CdSe quantum dots, respectively. In this work, we designed anisotropic nanostructure ZnO photoelectrodes, such as nanorods/nanosheets and nanorods array, for CdS/CdSe quantum dots co-sensitized solar cells. Our study revealed that the performance of QDSCs could be improved by modifying surface of ZnO to increase the loading of quantum dots and reduce the charge recombination.

Ag+ ion doped on the CdSe quantum dots for quantum-dot-sensitized solar cells’ application

2019 ◽  
Vol 125 (8) ◽  
Author(s):  
Ha Thanh Tung ◽  
Doan Van Thuan ◽  
Jun Hieng Kiat ◽  
Dang Huu Phuc
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Cdse Quantum Dots ◽  
Sensitized Solar Cells

High Efficiency Quantum Dot Sensitized Solar Cells Based on Direct Adsorption of Quantum Dots on Photoanodes

2017 ◽  
Vol 9 (27) ◽  
pp. 22549-22559 ◽  
Author(s):  
Wenran Wang ◽  
Guocan Jiang ◽  
Juan Yu ◽  
Wei Wang ◽  
Zhenxiao Pan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Sensitized Solar Cells ◽  
Direct Adsorption

Quantum Dots with Built-in Charge for Enhancing Quantum Dot Solar Cells and Infrared Photodetectors

2012 ◽  
pp. 297-316
Author(s):  
Kimberly A. Sablon ◽  
V. Mitin ◽  
J. W. Little ◽  
A. Sergeev ◽  
N. Vagidov
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Solar Cells

Cu2ZnSnS4 quantum dots as effective electron acceptors for hybrid solar cells with a broad spectral response

RSC Advances ◽  
2015 ◽  
Vol 5 (110) ◽  
pp. 90217-90225 ◽  
Author(s):  
Xun Zhou ◽  
Weili Meng ◽  
Chao Dong ◽  
Changwen Liu ◽  
Zeliang Qiu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Spectral Response ◽  
Electron Acceptors ◽  
Hybrid Solar Cells ◽  
Effective Electron ◽  
Solvothermal Technique

Cu2ZnSnS4 quantum dots are synthesized by a facile solvothermal technique and used as a novel effective acceptor material for polymer-based hybrid solar cells with a broad spectral response.

Charge generation performance enhancement by size-dependent Cu2GeSe3quantum dot-sensitized solar cells

2019 ◽  
Vol 12 (01) ◽  
pp. 1850090
Author(s):  
Zhou Liu ◽  
Zhuoyin Peng ◽  
Jianlin Chen ◽  
Wei Li ◽  
Jian Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Conversion Efficiency ◽  
Performance Enhancement ◽  
Photovoltaic Performance ◽  
Charge Generation ◽  
Transfer Property ◽  
Photon Conversion ◽  
Sensitized Solar Cells

Cu2GeSe3 quantum dot is introduced to instead of non-toxic CuInSe2 as a sensitizer for solar cells, which is employed to enhance the photovoltaic performance. Cu2GeSe3 quantum dots with various sizes are prepared by thermolysis process, which are employed for the fabrication of quantum dot-sensitized solar cells (QDSSC) according to assembly linking process. The optical absorption properties of the Cu2GeSe3 quantum dot-sensitized photo-electrodes have been obviously enhanced by the size optimization of quantum dots, which are better than that of CuInSe2-based photo-electrodes. Due to the balance on the deposition quantity and charge transfer property of the quantum dots, 3.9[Formula: see text]nm-sized Cu2GeSe3 QDSSC exhibits the highest current density value and incident photon conversion efficiency response, which result in a higher photovoltaic conversion efficiency than that of CuInSe2 QDSSC. The modulation of Cu2GeSe3 QDs will further improve the performance of photovoltaic devices.

Black phosphorus quantum dots as dual-functional electron-selective materials for efficient plastic perovskite solar cells

2018 ◽  
Vol 6 (19) ◽  
pp. 8886-8894 ◽  
Author(s):  
Nianqing Fu ◽  
Chun Huang ◽  
Peng Lin ◽  
Mingshan Zhu ◽  
Tao Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Black Phosphorus ◽  
Selective Layer ◽  
Dual Functional ◽  
Black Phosphorus Quantum Dots ◽  
Electron Extraction

Dual-functional black phosphorus quantum dot electron selective layer was designed for plastic perovskite solar cells. The efficient electron extraction and improved perovskite film quality contributed to the reasonably high efficiency.

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